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CM150RX1 24A IGBT Module

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Product Brochure
Collector-Emitter Voltage1200 V
Voltage1200 V
Collector Emitter Voltage1200 V
Collector Current150 A
ConfigurationHalf Bridge
Usage/ApplicationUPS
Package/CaseModule
Package TypeBox
NTC ThermistorYes
Model Name/NumberCM150RX1‑24A
IGBT TypeTrench
Operating Temperature-40°C to 150°C
BrandMitsubishi
ManufacturerInfineon
Mounting TypeSMD
Country of OriginMade in India

Minimum order quantity: 1 Piece

The CM150RX1‑24A is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. It is designed for medium‑to‑high power switching in industrial environments such as motor drives, inverters, UPS systems, and other power electronics requiring efficient, reliable semiconductor switching.

This module is part of Mitsubishi’s CM series, known for combining high voltage capability with good conduction and switching performance.

Electrical Ratings
ParameterTypical Value
Collector‑Emitter Voltage (V<sub>CES</sub>) ~1200 V — suitable for ~400–800 VAC converters and similar mains systems.
Collector Current (I<sub>C</sub>) 150 A continuous rating.
Gate‑Emitter Voltage (V<sub>GES</sub>) ±20 V (standard gate drive range).
Saturation Voltage (V<sub>CE(sat)</sub>) Typical ~1.7–1.9 V @ 150 A (low conduction loss).
Thermal Resistance (R<sub>th(j‑c)</sub>) ~0.16 °C/W maximum (indicates heat conduction efficiency).
Max Junction Temperature (T<sub>j</sub>) ~150 °C.
Isolation Voltage ~2500 V AC (module baseplate insulation).

Notes:

  • The module’s 1200 V class rating makes it suitable for systems with DC bus voltages up to ~900 V.

  • Low V<sub>CE(sat)</sub> reduces conduction losses, improving efficiency.

  • Internal Configuration


The CM150RX1‑24A is typically a discrete single IGBT module (i.e., one power transistor with integrated features) intended as a power switching element in a larger converter topology rather than a complete three‑phase bridge.


Key internal elements include:

  • Carrier Stored Trench‑Gate Bipolar Transistor (CSTBT™) technology — improves conduction/switching trade‑off.

  • Anti‑parallel fast recovery diode — integrated for handling inductive currents in PWM converters.

  • Low‑inductance packaging — suitable for high‑speed switching with reduced voltage overshoot.


Unlike multi‑pack “six‑pack” modules, this part serves as a building block for custom converter designs (half‑bridge, full‑bridge, chopper circuits, etc.) with external driver and auxiliary circuits.

Electrical & Switching Characteristics:
  • Low on‑state resistance: Typical saturation voltage around 1.7–1.9 V at 150 A helps reduce conduction loss.

  • Fast switching response: Advanced IGBT structure for efficient PWM operation with moderate switching speeds.

  • Short‑circuit withstand capability: Designed to tolerate brief short‑circuit events until protective circuitry can deactivate the device.


 Typical Applications:

The CM150RX1‑24A IGBT module is used in a variety of power electronics systems, including:

  • Motor drives and frequency inverters for industrial AC motors.

  • Uninterruptible Power Supplies (UPS) and power conversion systems.

  • Welders, induction heaters, and battery chargers where controlled switching is needed.

  • DC‑DC converters and chopper circuits in traction and renewable energy systems.


ETP761210M Yaskawa Power Card

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₹ 25000 / Piece Get Latest Price

Product Brochure
Input Voltage220 V
MaterialPCB
Usage/ApplicationAC Drive
Brandyaskawa
Warranty1 Year

Minimum order quantity: 1 Piece

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Amit Sanghvi (Proprietor)
Sanghvi Electronics
Ground Floor, Office No.1, Killedar Mansion, 7/7a, Musa Kiledar Street, K.K. Marg, Byculla, Jacob, Circle, Satrasta
Mumbai - 400011, Maharashtra, India

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