Sanghvi Electronics

This module integrates:

• IGBT switches
• Freewheel diodes
• Input rectifier bridge
• NTC temperature sensor

Key Electrical Specifications

• Collector-emitter voltage (VCES): 1200 V
• Nominal current (IC): 25 A
• Collector-emitter saturation voltage (VCE(sat)): ~1.85 V
• Diode forward voltage (VF): ~1.75 V
• Configuration: 3-phase rectifier + inverter stage (PIM)

Thermal Characteristics

• Max junction temperature (Tj): up to 150 °C
• Thermal features:
  • High thermal cycling capability
  • Isolated copper baseplate for efficient heat dissipation

Mechanical Details

• Package: EconoPIM™ 2
• Dimensions: ~107 × 45 mm
• Mounting: Screw + solder pin / PressFIT variants
• Isolation: Electrically isolated baseplate

Functional Description

Internal structure:

• 3-phase diode rectifier (AC → DC)
• IGBT inverter bridge (DC → AC)
• Freewheel diodes
• NTC sensor for temperature monitoring

Key Features:

• 1700 V high-voltage capability
• 300 A class current handling
• Trench IGBT4 low-loss technology
• PressFIT high-reliability interconnect
• Integrated temperature sensing
• High short-circuit robustness
• Industrial-grade mechanical design

Applications:

• Industrial motor drives (VFDs)
• Medium-voltage converters
• Wind turbine auxiliary converters
• Heavy-duty UPS systems
• Industrial automation power stages                                                           

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