Sanghvi Electronics

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We are engaged in offering GD40PIX120C5S Starpower IGBT Module to our clients. Our range of all products is widely appreciated by our clients.

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1. General Overview:

• Type: IGBT Power Module (Power Integrated Module “PIM”)

• Manufacturer: StarPower Semiconductor Ltd.

• Application: Medium‑power inverter/rectifier systems, UPS, motor drives, servo amplifiers

• Topology/Function: Combines IGBT switching and anti‑parallel freewheel diode elements in one compact package suitable for high‑efficiency PWM power conversion.

This module integrates a complete IGBT bridge and diode structure, and often includes boost chopper and NTC temperature sensor connections, making it useful in complex converter front‑ends.

2. Electrical Specifications:

3. Internal Configuration:

The GD40PIY120C5S is built as a compact power integrated module (PIM) with:

• IGBT transistor(s) optimized for switching

• Fast & soft anti‑parallel free‑wheel diodes

• Isolated copper baseplate using DBC (Direct Bonded Copper) technology for high thermal performance

• Low inductance layout for improved switching behavior

• Optional NTC temperature sensor interface for thermal monitoring in applications

4. Key Technological Features:

• Trench IGBT technology: Provides low conduction loss and high ruggedness

• Fast & soft diode recovery: Reduces switching losses and EMI

• Isolated DBC baseplate: Improves thermal spreading and reliability

• 10 µs short‑circuit capability: Enhanced ruggedness against overloads

• Low inductance package: Improves switching performance at high frequency

5. Mechanical and Packaging Details:

• Package style: PIM “C5” module footprint (approx. 45 mm width)

• Mounting: PCB press‑in and screw fasteners

• Baseplate material: Copper for thermal management

• Case connection: Power terminals and control terminals accessible for module mounting

6. Typical Applications:

The module is well suited for medium‑power industrial systems such as:

• Motor drive inverters

• UPS (Uninterruptible Power Supplies)

• AC and DC servo drive controllers

• General power conversion modules

• Boost chopper and active rectifier front‑ends

 General Overview:

The GD75PIY120C6S is a 1200 V, ~75 A class trench IGBT module optimized for efficient switching and robust thermal performance. It uses advanced trench field-stop IGBT technology with integrated soft recovery diodes and is built on a Direct Bonded Copper (DBC) baseplate for improved heat dissipation and mechanical stability in demanding applications.

Electrical & Semiconductor Ratings:

Voltage & Current

• Collector–Emitter Voltage (V_CES): 1200 V blocking capability for high DC-link systems.

• Continuous Collector Current (I_C): ~75 A @ 25 °C case temperature (in inverter mode).

• Pulsed Collector Current: ~150 A for short pulses (typically 1 ms).

• Collector-Emitter Saturation Voltage (V_CE(sat)): Typical ~1.7 – 2.15 V, indicating low conduction loss.

• Gate-Emitter Voltage (V_GE): ±20 V standard IGBT drive range.

Diode & Rectifier Ratings:

• Repetitive Peak Reverse Voltage: 1200 V (for anti-parallel diodes in inverter configuration).

• Continuous Forward Diode Current: ~75 A.

• Peak Diode Current (1 ms): ~150 A.

• Rectifier Mode Reverse Voltage: ~1600 V.

 Thermal & Environmental:

• Maximum Junction Temperature: 175 °C, offering thermal robustness.

• Operating Junction Temperature Range: –40 °C to +150 °C.

• Storage Temperature: –40 °C to +125 °C.

• Isolation Voltage: ~2500 V RMS (50 Hz, 1 min) between power terminals and heatsink/base.

Module Construction & Features:

• IGBT Technology: Trench field-stop IGBTs with positive temperature coefficient for safe parallel operation.

• Anti-Parallel Diodes: Fast, soft recovery freewheeling diodes integrated to support bidirectional AC currents in inverter circuits.

• Baseplate: DBC copper baseplate for excellent thermal conductivity and mechanical stability.

• Low Inductance: Module designed with low stray inductance for improved dynamic switching performance.

• Short-Circuit Capability: Rugged design can tolerate ~10 µs short-circuit current events typical of power modules.

Typical Applications:

This module’s electrical and thermal characteristics make it suitable for:

• Motor drives & three-phase inverters — industrial AC motor control.

• Uninterruptible Power Supplies (UPS) — inverter output stages.

• Servo drives & industrial converters — precision control systems.

• General power electronics — renewable inverters, power supplies, and rectifier/inverter bridges.                                                                                                                                     

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The GD50PIY120C5SN is a 1200 V, ~50 A IGBT power module built using advanced trench field-stop (FS) IGBT technology. It integrates multiple power semiconductor devices (IGBT switches and anti-parallel diodes) into a single rugged module with a Direct Bonded Copper (DBC) isolated baseplate, optimized for efficient switching, low conduction losses, and robust thermal performance.

 

It is commonly used in inverters, motor drives, UPS systems, and general industrial power electronics where reliable high-voltage switching is required.

Key Electrical Specifications Voltage & Current Ratings:

• Collector-Emitter Voltage (V_CES): 1200 V DC — high-voltage blocking capability for industrial DC-link systems.

• Gate-Emitter Voltage (V_GE): ±20 V — standard IGBT gate drive range.

• Continuous Collector Current (I_C): ~85 A @ T_C = 25 °C, derated at higher case temperatures.

• Pulsed Collector Current (I_CM): ~100 A (1 ms pulse).

• Saturated Collector-Emitter Voltage (V_CE(sat)): ~1.7 – 2.15 V typical — low on-state voltage drop for reduced conduction loss.

• Maximum Power Dissipation (P_D): ~292 W @ T_Jmax = 175 °C.

Diode & Rectifier Characteristics:

• Anti-parallel Diodes (Inverter Mode):

  • Repetitive Peak Reverse Voltage (V_RRM): ~1200 V

  • Continuous Forward Diode Current: ~50 A

  • Peak Forward Current: ~100 A (1 ms).

• Rectifier Mode:

  • Repetitive Peak Reverse Voltage: ~1600 V

  • Average Output Current (AC, 50/60 Hz): ~50 A

  • Surge Forward Current (10 ms): ~850 A.

Thermal & Environmental Ratings:

• Maximum Junction Temperature (T_Jmax): 175 °C (inverter/rectifier).

• Operating Junction Temperature: –40 °C to +150 °C.

• Storage Temperature: –40 °C to +125 °C.

• Isolation Voltage: ~2500 V RMS between power terminals and heatsink/baseplate (1 min, 50 Hz).

Module Design & Features:

• Advanced Trench FS IGBT Technology: Provides low on-state saturation voltage and reduced switching/conduction losses.

• Positive Temperature Coefficient of V_CE(sat): Improves parallel operation and thermal stability.

• Short-Circuit Capability: Module can withstand short-circuit events for ~10 µs, enhancing ruggedness in fault conditions.

• Integrated Fast & Soft Reverse Recovery Diodes: Minimizes reverse recovery losses and EMI during commutation.

• Isolated DBC Baseplate: Direct Bonded Copper substrate improves heat conduction and electrical isolation to the heatsink.

Typical Applications:

This module is suitable for a wide range of industrial power electronics, including:

• Three-phase inverters and motor drives (AC induction/servo systems).

• Uninterruptible Power Supplies (UPS) output stages.

• DC-DC converters and brake choppers.

• General industrial power conversion systems requiring efficient switching and robust thermal performance.

General Overview:

The GD25PJY120L3S is a 1200 V, ~25 A class IGBT module built using Advanced Trench Field‑Stop (FS) IGBT technology, featuring low conduction losses, integrated freewheeling diodes, and rugged thermal performance in a compact press‑fit or PCB‑mount module. It’s often configured as a three‑phase PIM (power integrated module) or rectifier/boost‑chopper block for general inverter, motor drive, and UPS applications.

Electrical Ratings & Core Specifications:

Collector‑Emitter & Drive

• Collector‑Emitter Voltage (V_CES): 1200 V DC blocking capability — suitable for industrial DC‑link voltages.

• Gate‑Emitter Voltage (V_GE): ±20 V — standard IGBT drive voltage range.

• Continuous Collector Current (I_C): 50 A @ T_C=25 °C; 25 A @ 100 °C case temperature (in inverter mode).

• Pulsed Collector Current (I_CM): 50 A (1 ms pulse) capability for short overloads.

• Collector‑Emitter Saturation Voltage (V_CE(sat)): Typically ~1.7 V — indicates low on‑state voltage drop.

• Total Power Dissipation (P_D): ~252 W at T_jmax conditions (in inverter mode).

Diode & Rectifier Characteristics:

Inverter Mode (freewheeling diodes)

• Repetitive Peak Reverse Voltage (V_RRM): 1200 V.

• Diode Continuous Forward Current: ~25 A.

• Diode Maximum Forward Current (1 ms): 50 A.

Rectifier Mode:

• Repetitive Peak Reverse Voltage: 1600 V (higher reverse rating when used as rectifier).

• Average Output Current (50/60 Hz): ~25 A.

Thermal & Environmental Ratings:

• Maximum Junction Temperature (T_jmax): ~175 °C (in inverter/brake mode).

• Operating Junction Temperature: –40 °C to +150 °C range.

• Storage Temperature: –40 °C to +125 °C.

• Isolation Voltage: ~2500 V RMS (50 Hz, 1 min) between terminals and heatsink/baseplate.

Module Architecture & Features:

• IGBT Technology: Advanced Trench Field‑Stop (FS) design — provides low V_CE(sat), reduced conduction losses, and good switching performance.

• Short‑Circuit Capability: ~10 µs short‑circuit withstand typical of Trench FS IGBT modules.

• Integrated Freewheeling Diodes: Fast & soft reverse recovery diodes per leg — smooth commutation and reduced EMI.

• Low Inductance Case: Helps reduce stray inductance for improved dynamic switching performance.

• DBC Baseplate: Direct Bonded Copper insulated substrate for good thermal conduction and mechanical strength.

• Press‑Fit / PCB Mount: Designed for press‑in or PCB solder mounting in compact inverter assemblies.

 Typical Applications:

The GD25PJY120L3S is suitable for medium‑power industrial power electronics, including:

• Three‑phase inverters for AC motor drives.

• General inverter stages in industrial converters and UPS systems.

• Servo and motion control power stages.

General Overview:

The GD15PJY120L2S is a compact insulated-gate bipolar transistor (IGBT) module with integrated diodes, designed for switching and rectifier functions in power electronics systems. The device uses Advanced Trench Field-Stop IGBT technology, offering low conduction losses, rugged short-circuit capability and efficient switching performance. It is typically packaged in an L2.2 case with press-in PCB mounting.

Key Electrical Ratings:

These values reflect the module’s capability for handling moderate current at high blocking voltage in industrial systems.

 Module Structure & Features:

• IGBT with integrated diodes: Combines IGBT transistor(s) and fast recovery diodes in one package for simplified converter / inverter designs.

• Topologies supported: Boost chopper, three-phase IGBT bridge with diode bridge outputs (often used in rectifiers and motor drives).

• Advanced Trench FS IGBT: Field-Stop trench architecture improves switching efficiency and reduces on-state voltage drop.

• NTC Thermistor: Some versions include an integrated temperature sensor (NTC) to support thermal monitoring and protection.

• L2.2 Package: Compact press-in PCB mount module (low inductance case) suitable for medium power boards.

• Construction: Diode + IGBT blocks are mounted on a DBC (Direct Bonded Copper) substrate with isolated base, enabling mounting on heatsinks if needed.

Performance Characteristics:

• Low conduction losses: Due to trench IGBT design and choice of materials, resulting in lower V_CE(sat) and less power dissipation.

• Short-circuit ruggedness: Built to withstand short pulses and transient conditions common in power electronic converters.

• Fast reverse recovery diodes: The anti-parallel diodes offer relatively soft and quick recovery, reducing switching stress and EMI.

• Thermal & junction limits: Typical maximum junction temperature is around 150–175 °C depending on operating mode and duty cycle.

Typical Applications:

✔ Motor drive inverters — AC and DC drives for industrial motors.
✔ Boost chopper circuits — DC-DC conversion stages requiring robust switching.
✔ UPS — Power conversion in uninterruptible power supplies.
✔ General power converters — Medium-power switching in industrial control and energy systems.

Overview:

The GD10PJY120L2S is a power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Starpower Semiconductor. It combines one or more IGBTs with free-wheeling diodes in a compact press-fit/PCB mount package and is designed for medium-power switching and rectification applications such as small motor drives, choppers, and three-phase rectifier bridges.

Electrical Ratings & Performance:

Construction & Features:

• Module Type: IGBT with integrated free-wheeling diodes.

• Topology / Application Options: Supports configurations such as boost chopper, three-phase rectifier, brake inverter, and other hybrid converter architectures.

• Semiconductor Technology: Advanced Trench Field-Stop IGBT for improved switching and conduction performance.

• Package: L2.2 style module designed for press-in PCB mounting to minimize inductance and enable compact designs.

• Free-wheeling Diodes: Built-in anti-parallel diodes provide current recirculation in switching applications, reducing external component count.

• NTC Thermistor: Some variants may include an onboard temperature sensor (NTC) for thermal monitoring (check specific datasheet).

• Ruggedness: Designed for reliable operation over thermal cycles typical of industrial switching environments.

 Typical Applications:

✔ Three-phase rectifiers and brake inverters
✔ DC-DC converters and boost choppers
✔ Small to medium motor drive inverters
✔ Uninterruptible power supplies (UPS)
✔ General power conversion in industrial control systems 

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We are engaged in offering Gd15Pjy120L2S IGBT Modules to our clients. Our range of all products is widely appreciated by our clients.

1. General Overview:

• Device Type: IGBT Power Module

• Manufacturer: StarPower Semiconductor

• Part Number: GD15PJK120L1S

• Voltage Class: 1200 V

• Current Rating: ~15 A

• Package: PIM (Power Integrated Module)

• Technology: Standard NPT IGBT (positive temperature coefficient)

• Cooling: Heat‑sink or PCB mounting compatible

This module integrates a single IGBT switch with anti‑parallel diode in a compact module format, suitable for moderate power switching applications.

2. Key Electrical Specifications:

3. Internal Circuit Configuration:

The GD15PJK120L1S features:

• One IGBT transistor for power switching

• Anti‑parallel (free‑wheeling) diode integrated for handling inductive load current during turn‑off

• Positive temperature coefficient VCE(sat) for better current sharing and thermal stability

• Low‑inductance package suitable for fast switching circuits

4. Main Features:

Key features of this IGBT module include:

• 1200 V blocking capability, enabling use in high voltage converters

• Low on‑state conduction loss with positive VCE(sat) coefficient

• Fast switching and soft reverse recovery diode

• Short‑circuit ruggedness (10 µs) for protection against transient events

• Compact PIM package with isolated baseplate

• Moderate current capability (≈15 A) suitable for small inverters and power supplies

• Wide operating temperature range for industrial applications

5. Mechanical and Thermal Characteristics:

• PIM module housing with leaded pins or solderable terminals

• Isolated copper base that can be mounted on a heatsink or PCB

• Good thermal performance for a module of this power class (thermal values typical for modules of this type)

• Designed for reliable operation under varying load conditions.

6. Typical Applications:

The GD15PJK120L1S module is used in:

• AC and DC motor drives and control systems

• General inverter circuits for power conversion

• UPS (Uninterruptible Power Supply) systems

• Servo amplifiers and motion control equipment

• Small industrial power supplies and renewable power systems

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