Sanghvi Electronics

• Type: Dual IGBT (half-bridge configuration)
• Series: S-Series IGBTMOD™
• Configuration: 2 IGBTs + 2 anti-parallel diodes
• Application class: High-power industrial converters

It forms one half-bridge leg, typically used in full bridge or 3-phase inverter systems.

• Type: PM200CBS060

• Manufacturer: Semikron

• Technology: IGBT module with anti-parallel diodes

• Configuration: Single IGBT with diode, or half-bridge depending on variant

• Application: Industrial inverters, motor drives, UPS, welding equipment, and other high-power electronics.

The PM200CBS series is a high-current, low-loss IGBT module optimized for medium voltage and high-power switching.

The CM200TXPA-24T is a high-power insulated gate bipolar transistor (IGBT) module designed for three-phase inverter applications. It integrates multiple IGBT switches and freewheel diodes in a compact module.

• Type: Six-pack (3-phase bridge) IGBT module
• Technology: Advanced trench gate / CSTBT™ (low loss, high efficiency)
• Application class: Medium-to-high power converters

The CM300DY-24NF is a dual IGBT module with a diode freewheeling arrangement in a standardized industrial package. It is designed for high-power switching and inverter applications, offering high voltage and current handling, robust switching, and reliable thermal performance.

• Module Type: Dual IGBT with anti-parallel diodes

• Voltage Rating: 1200 V (Collector-Emitter)

• Current Rating: 300 A (per IGBT, continuous)

• Package: Standard isolated SEMIPACK™ or similar industrial package

• Applications: Industrial motor drives, welding machines, inverters, UPS, switch-mode power supplies

• High Voltage Capability: 1200 V V_CES rating for medium- to high-voltage applications

• High Current Handling: 300 A continuous current per IGBT

• Built-in Freewheeling Diode: Allows efficient current recirculation in inverter and motor-drive circuits

• Rugged and Reliable: Designed to withstand short circuits and overcurrent transients

• Fast Switching Times: Suitable for high-frequency power electronics

• Electrically Isolated Case: Simplifies thermal management and mounting

• Junction-to-Case Thermal Resistance (Rth JC): ~0.08–0.12 °C/W (per IGBT)

• Junction-to-Ambient Thermal Resistance (Rth JA): Dependent on heat sink and cooling

• Maximum Junction Temperature (Tj max): 150°C

• Maximum Storage Temperature (Tstg): -40 to 125°C

Note: Proper heat sink design is critical for safe continuous operation at 300 A. Forced air or liquid cooling may be necessary in high-power systems.

• Package Type: SEMIPACK 2 standard module

• Mounting: Screw-down with thermal interface material

• Electrical Isolation: Electrically isolated baseplate for easier mounting

• Pin Configuration: Standard IGBT + diode terminals, easily integrated into industrial circuits

• Industrial motor drives (AC and DC)

• Solar inverters and wind power systems

• Uninterruptible power supplies (UPS)

• Welding machines and induction heating

• General high-power switch-mode power electronics

The module contains:

• 1 IGBT power transistor

• 1 fast recovery free-wheel diode (FWD)

• Isolated baseplate

• High-current power terminals

The CM900DU‑24NF is a high‑power Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power conversion applications. It contains two IGBT switches in a half‑bridge configuration with associated free‑wheeling diodes, making it suitable for use as a basic inverter leg or high‑current switch block in industrial systems such as motor drives, UPS converters, renewable energy inverters, and traction power electronics.

The PM20CSJ060 is a three‑phase Intelligent Power Module (IPM) based on Insulated Gate Bipolar Transistor (IGBT) technology. It is typically manufactured under the Powerex Intellimod™ series and integrates power switching devices with built‑in gate drive and protection logic, making it suitable for compact inverter and control systems.

Type: IGBT (Insulated Gate Bipolar Transistor) power module
Configuration: Likely a half-bridge module (IGBTs + freewheeling diodes)

Key Ratings:

• Collector-emitter voltage (V_CE): 1200 V

• Continuous collector current (I_C): 75 A

• Surge current capability: Higher than I_C for short pulses

• Gate drive voltage: Standard IGBT control (~15 V)

Thermal & Mechanical:

• Package type: High-power module (H6C package)

• Cooling method: Baseplate heatsink (forced air or liquid)

• Operating junction temperature: Typically up to 150 °C

• Isolation voltage: High dielectric strength for industrial use

  1. Manufacturer and Series

  The code resembles the naming conventions used by Mitsubishi Electric for IGBT modules, though other manufacturers may have similar codes. This is likely a high-power IGBT module designed for industrial applications such as motor drives, inverters, and power converters.

The CM1400DU-24NF IGBT Module is a high-power dual IGBT module developed by Mitsubishi Electric / Powerex Inc..
It integrates two IGBTs and two free-wheeling diodes in a half-bridge configuration, allowing efficient switching in high-power inverter and motor-drive systems.

The module is designed for industrial power electronics applications where high current and high voltage switching are required.

The CM35MXB2‑24A is a medium‑power IGBT module (Insulated Gate Bipolar Transistor) manufactured by Mitsubishi Electric. It is designed to serve as the core of motor drive inverters and power conversion systems where efficient high‑frequency switching and robust current handling are needed.

• Device Type: IGBT Power Module

• Manufacturer: Mitsubishi Electric

• Part Number: CM35MXB2‑24A

• Voltage Class: 1200 V

• Current Rating: ~35 A continuous

• Package Type: Flat base insulated module

• Cooling: Heat‑sink mounting

• Purpose: Three‑phase AC inverter and brake/chopper integration in motor drives and converters

The CM600DU‑24NF is a high‑power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Mitsubishi Electric (often branded under IGBTMOD™ series). It features a dual‑element half‑bridge configuration designed for high‑current and high‑voltage switching applications such as inverters, motor drives, UPS systems, and industrial power converters.

The CM800DXLE-24A is a high-power dual IGBT module manufactured by Mitsubishi Electric. It is designed for high-current industrial power switching applications, including motor drives, renewable-energy converters, and high-power inverters.

The module integrates two high-power IGBTs with anti-parallel free-wheel diodes, forming a half-bridge configuration that is commonly used in inverter and converter circuits. It provides high switching efficiency, high current capability, and reliable thermal performance.

The PM50RL1C060 is a 600 V / 50 A three-phase IGBT Intelligent Power Module that combines:

• Six IGBTs for a 3-phase inverter bridge

• Free-wheel diodes

• Gate driver circuitry

• Protection and fault detection circuits

All components are integrated inside an insulated flat-base package to reduce external circuitry and improve reliability.

It uses 5th-generation CSTBT (Carrier Stored Trench Gate Bipolar Transistor) technology for better efficiency and lower conduction losses.

The CM200DY‑24A is a dual IGBT (Insulated Gate Bipolar Transistor) power module designed for high‑power switching applications. It integrates two IGBTs and their corresponding fast‑recovery diodes in a half‑bridge configuration, allowing efficient control of AC motors, inverters, and other power conversion systems.

• Module Type: Dual IGBT half‑bridge

• Voltage Class: 1200 V

• Current Class: 200 A

• Package: Screw‑mount module with insulated baseplate

The PM200CVA060 is a 600 V, 200 A Intelligent Power Module (IPM) designed for robust three‑phase power conversion and control. Unlike a simple IGBT pair, this is an integrated module that includes power devices plus gate drive and protection logic in a rugged package, simplifying system design.

The CM400DY‑34TA is an Insulated Gate Bipolar Transistor (IGBT) module that integrates two high‑current IGBTs and their corresponding free‑wheeling diodes inside a rugged package for high‑power semiconductor switching. IGBTs are hybrid devices combining the fast gate control of MOSFETs with the high current and voltage handling of bipolar transistors — making them ideal for medium‑ to high‑power applications.

The CM1000HA-24H is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric (Powerex series). It is designed for high-power switching applications and integrates a single IGBT transistor with a fast-recovery free-wheel diode inside an insulated module package.

This module is used in high-current industrial power electronics systems, especially where efficient switching of large currents and voltages is required.

• High current capability 1000 A

• High voltage rating 1200 V

• Low VCE(sat) for reduced conduction losses

• Super-fast recovery free-wheel diode

• Low gate drive power

• High-frequency switching capability

• Isolated baseplate for easier mounting and thermal management

• High reliability in heavy-duty industrial systems

The PS11035 belongs to the Intellimod™ series, which integrates power semiconductor devices with control and protection circuitry in one module. This design reduces the need for external driver components and simplifies inverter system design.

Basic characteristics

• Device type: Intelligent IGBT Power Module (IPM)

• Configuration: 3-phase inverter bridge

• Maximum collector-emitter voltage: 600 V

• Current rating: ≈15–20 A

• Isolation voltage: ≈2500 V

• Package type: 30-pin PowerDIP module

The PM200RSE060 is a 600 V / 200 A three-phase IGBT inverter module manufactured by Mitsubishi Electric / Powerex.

Main Features:

• Three-phase inverter bridge configuration

• Built-in gate drive circuits

• Integrated free-wheel diodes

• Protection and fault detection circuits

• Insulated baseplate for heat-sink mounting

This integration reduces external components and increases system reliability in power electronics.

The CM400C1Y-24S is a high-power insulated gate bipolar transistor (IGBT) module designed for high-speed switching and power control applications such as motor drives, inverters, UPS systems, and renewable energy systems.

It belongs to Mitsubishi’s S-series and is optimized for low loss, high efficiency, and compact industrial power designs.

• Topology: Dual IGBT (half-bridge / AC switch)

• Contains:

  • 2 × IGBTs (Tr1, Tr2)

  • 2 × anti-parallel freewheeling diodes

• Configuration: Common emitter / AC switch type

This structure allows:

• Bidirectional current flow

• Efficient switching of inductive loads

• Reduced voltage spikes via diodes

The PM450CLA120 is a three-phase IGBT inverter module designed for high-power motor drive and energy-conversion systems. It combines six IGBTs configured as a three-phase bridge with integrated gate-drive and protection logic, reducing the need for external components.

The module uses 5th-generation CSTBT™ (Carrier Stored Trench Bipolar Transistor) technology, which reduces conduction losses and improves switching performance.

It is packaged in a flat-base insulated power module that provides high electrical isolation and efficient heat dissipation when mounted on a heatsink.