IGBT Module

Product Details:

📌 1. General Description

The SKiiP38NAB12T4V1 is a 1200 V, intelligent power module (IPM) from Semikron/Danfoss, built using integrated Converter‑Inverter‑Brake (CIB) topology. It combines a three‑phase rectifier stage, a three‑phase inverter bridge, and brake‑chopper circuitry in a single compact package — reducing external components and simplifying design for medium‑power motor drives, UPS and renewable energy inverters.

📊 2. Key Electrical Ratings 🔌 3. Internal Configuration

The SKiiP38NAB12T4V1 integrates:

• Three‑phase rectifier (AC to DC) front end

• Brake chopper transistor + diode (for handling regeneration)

• Three‑phase inverter bridge (IGBT pair per phase leg)

• Free‑wheeling diodes

• NTC temperature sensor for thermal monitoring

Because of this CIB topology, a complete motor drive power stage can be implemented with minimal external silicon.

⚙️ 4. Semiconductor Technology

• Trench 4 IGBT chips — offer low on‑state saturation voltage and lower conduction losses.

• CAL freewheeling diodes — provide soft recovery behavior, reducing switching losses and EMI.

• Spring contact technology — solderless interconnection improves reliability and thermal cycling life.

📦 5. Mechanical and Thermal Features

• MiniSKiiP 3 package — compact and optimized for PCB integration and efficient cooling.

• Press‑fit terminals (often with screw mounting) for simplified mechanical assembly.

• Thermal performance enables operation up to elevated junction temperatures and efficient heat transfer to heatsinks.

Typical module size ~82 × 59 × 16 mm; weight ~80–95 g.

🎯 6. Typical Applications

• Variable Frequency Drives (VFDs) for motors

• Industrial power converters and inverters

• Uninterruptible Power Supplies (UPS)

• Renewable energy systems (solar/wind inverters)

• Braking and regenerative energy systems

✅ 7. Advantages

• High integration — rectifier, inverter, and brake in one module.

• Reduced BOM and easier layout compared to discrete designs.

• Enhanced reliability with spring contacts and insulated package.

• Good thermal behavior for compact drive systems.

• Suitable for ~22 kW systems and up to ~41 kVA inverter.

Additional Information:

• Item Code: SKiiP38NAB12T4V1
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Product Details:

1. General Description

The 6MBI450V-120 is a high-power IGBT module manufactured by Fuji Electric. It is a 6-pack IGBT module that integrates six IGBTs and six anti-parallel free-wheel diodes in one package, forming a three-phase inverter bridge commonly used in industrial motor drives and power conversion systems.

The module belongs to Fuji’s V-Series IGBT modules, designed for high-efficiency switching, low conduction loss, and high current capability in demanding industrial environments.

2. Internal Configuration

The module contains:

• 6 IGBT transistors

• 6 anti-parallel free-wheel diodes

• Arranged in a three-phase inverter (six-switch bridge) configuration

This structure allows direct use in AC motor inverter circuits.

3. Key Features

• High voltage capability 1200 V

• High current rating 450 A

• Low collector-emitter saturation voltage (VCE(sat))

• Fast switching performance

• High thermal reliability

• Compact EconoPACK module package

• Reduced switching and conduction losses

• Suitable for high-power PWM inverter operation

4. Absolute Maximum Ratings

These values define the safe operating limits for the module.

5. Electrical Characteristics
6. Thermal Characteristics 7. Mechanical Characteristics

• Package type: 6-Pack IGBT module (M629 package)

• Dimensions: approximately 150 mm × 162 mm × 17 mm

• Weight: about 950 g

• Mounting: heatsink mounting with screw terminals

8. Operating Principle

1. A DC voltage source is supplied to the module.

2. Gate driver circuits apply PWM control signals to the six IGBTs.

3. The IGBTs switch on and off rapidly to convert DC power into three-phase AC output.

4. The free-wheel diodes provide a current path during reverse conduction when driving inductive loads.

9. Typical Applications

The 6MBI450V-120 module is widely used in:

• Industrial motor drives

• Variable Frequency Drives (VFD)

• UPS systems

• Servo drive systems

• Renewable energy inverters

• High-power power converters

Additional Information:

• Item Code: 6MBI450V-120
• Production Capacity: READY STOCK
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Product Details:

1. General Description

The CM1000HA-24H is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric (Powerex series). It is designed for high-power switching applications and integrates a single IGBT transistor with a fast-recovery free-wheel diode inside an insulated module package.

This module is used in high-current industrial power electronics systems, especially where efficient switching of large currents and voltages is required.

2. Key Features

• High current capability 1000 A

• High voltage rating 1200 V

• Low VCE(sat) for reduced conduction losses

• Super-fast recovery free-wheel diode

• Low gate drive power

• High-frequency switching capability

• Isolated baseplate for easier mounting and thermal management

• High reliability in heavy-duty industrial systems

3. Absolute Maximum Ratings 4. Static Electrical Characteristics 5. Dynamic Characteristics 6. Thermal Characteristics 7. Mechanical Characteristics

• Module weight: ≈1.6 kg

• Mounting: Chassis / heatsink mount

• Main terminals: M8 bolts

• Control terminals: M4 screws

8. Internal Configuration

The module contains:

• 1 IGBT transistor

• 1 anti-parallel free-wheel diode

• Isolated baseplate for heat sinking

9. Typical Applications

• High-power motor drives

• UPS systems

• Industrial welding machines

• Renewable energy inverters (solar/wind)

• Servo and motion control

• High-power power converters

Additional Information:

• Item Code: CM1000HA-24H
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Product Details:

1. General Overview

The 7MBR150VN‑120 is a high‑power Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fuji Electric. It belongs to the Fuji V‑series of IGBT modules in a PIM (Power Integrated Module) configuration suitable for industrial inverter and power electronics applications.

• Device Type: IGBT Power Module (PIM)

• Manufacturer: Fuji Electric

• Model: 7MBR150VN‑120

• Voltage Class: 1200 V

• Current Rating: 150 A (continuous)

• Cooling: Heat‑sink / chassis mounting

• Package: M720 dual‑in‑line power module format

2. Key Electrical Specifications 4. Main Features

Key module features include:

• 1200 V voltage class with high blocking capability

• 150 A continuous current handling

• Integrated free‑wheel diodes for robust inductive load switching

• Compact PIM package (M720) with PCB or heat‑sink mount option

• Low VCE(sat) and switching losses for high efficiency

• High junction temperature capability (175 °C)

• High isolation between terminals and baseplate (2500 VAC)

5. Thermal Characteristics

Good thermal performance is key to reliable operation:

• High maximum junction temperature: up to 175 °C

• Low thermal resistance paths from the semiconductor to the baseplate

• Isolated baseplate allows mounting on a common heat sink with minimal insulation overhead.

This enables efficient heat removal in high‑load and high‑duty cycle applications.

6. Mechanical Characteristics

The isolated baseplate allows safe mounting onto grounded heatsinks while maintaining electrical isolation.

7. Typical Applications

The 7MBR150VN‑120 is commonly used in:

• Three‑phase AC motor drives

• Variable frequency drives (VFD)

• Uninterruptible Power Supplies (UPS)

• Servo amplifiers

• Industrial power converters

• Renewable energy inverter

Additional Information:

• Item Code: 7MBR150VN120
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Product Details:

1. General Overview

• Device Type: IGBT Power Module

• Series: V-Series (6th Generation)

• Configuration: 3-level T-type (1-leg) inverter module

• Manufacturer: Fuji Electric

• Package Type: M404 power module

This module integrates multiple IGBTs and diodes in a compact package to handle very high current and voltage levels, making it suitable for large industrial power electronics systems.

2. Key Electrical Specifications

The module supports very high current switching and is designed for high-power industrial converters.

3. Internal Circuit Configuration

The 4MBI900VB-120R1-50 contains:

• 4 IGBTs

• Reverse-blocking IGBTs (RB-IGBT)

• Anti-parallel diodes

• Thermistor for temperature sensing

Topology

• 3-Level T-type NPC inverter (1-leg)

• Switches:

  • T1, T4 → Main inverter switches

  • T2, T3 → AC switch elements

This configuration improves efficiency and switching performance in high-power inverters.

4. Key Features

• High current capability (900 A)

• High voltage rating (1200 V class)

• Reverse Blocking IGBT (RB-IGBT) technology

• Low inductance module structure

• Optimized T-type 3-level topology

• High efficiency and reduced switching loss

These features make the module suitable for high-power energy conversion systems.

5. Mechanical Information

The large package allows better thermal dissipation for high current operation.

6. Typical Applications

The 4MBI900VB-120R1-50 is used in high-power industrial and renewable-energy equipment such as:

• Industrial motor drive inverters

• Uninterruptible Power Supply (UPS)

• Solar power converters

• Wind power generation systems

• High-power power conditioners

These applications require efficient switching and high power handling capability.

7. Working Principle

The module operates as a power electronic switching device:

1. A gate voltage (≈15 V) is applied to the IGBT.

2. The IGBT turns ON, allowing current from collector → emitter.

3. Removing the gate signal turns the device OFF.

4. Free-wheel diodes carry reverse current during switching.

The 3-level T-type topology reduces switching losses and improves inverter efficiency.

Additional Information:

• Item Code: 4MBI900VB-120R1-50
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Product Details:

📌 Overview

The CM900DU‑24NF is a high‑power Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power conversion applications. It contains two IGBT switches in a half‑bridge configuration with associated free‑wheeling diodes, making it suitable for use as a basic inverter leg or high‑current switch block in industrial systems such as motor drives, UPS converters, renewable energy inverters, and traction power electronics.

⚡ Key Electrical Specifications 🔌 Internal Structure & Operation

• Half‑Bridge Topology: Two IGBTs and two free‑wheeling diodes form the core switching elements for a single inverter leg.

• Fast Recovery Diodes: Each IGBT has a super‑fast free‑wheel diode in reverse parallel to handle inductive load current during switching transitions.

• Isolated Baseplate: The power section is mounted on an insulated substrate for simplified heatsink mounting and improved thermal management.

🌡️ Thermal & Mechanical Characteristics

• Baseplate Isolation: Insulated for safe mounting and thermal control.

• Thermal Resistance: Typical low junction‑to‑case thermal resistance, helping reduce device temperature rise under load.

• Chassis Mount Module: Package designed for mounting on heatsinks in industrial panels.

• Wide Temp. Range: –40 °C to +150 °C operating junction temperature.

⚙️ Typical Performance Characteristics

The module’s switching and conduction characteristics make it well‑suited for PWM control in medium to high power ranges:

• Low drive power requirement due to efficient IGBT gate design.

• Low V_CE(sat) enhances conduction efficiency.

• Fast switching capability permits operation in kHz PWM control schemes.

🔌 Typical Applications

Because of its ratings and design, the CM900DU‑24NF is commonly used in:

• High‑power inverters for industrial AC drives and servo systems

• UPS and power supply converters with high current demands

• Renewable energy interfaces (solar/wind power electronics)

• Traction and utility converters in heavy‑duty systems 

Additional Information:

• Item Code: CM900DU24NF
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Product Details:

📌 General Overview

The CM600DU‑24NF is a high‑power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Mitsubishi Electric (often branded under IGBTMOD™ series). It features a dual‑element half‑bridge configuration designed for high‑current and high‑voltage switching applications such as inverters, motor drives, UPS systems, and industrial power converters.

⚡ Electrical Ratings 🔌 Module Configuration

• IGBT Configuration: Dual IGBTs arranged as a half‑bridge (two switches with a common midpoint).

• Integrated Free‑Wheeling Diodes: Each IGBT has an integrated diode to support current recirculation in inverter stages.

• Isolation: The power semiconductor elements and interconnects are isolated from the heatsink baseplate, simplifying thermal design.

• Package Type: Chassis‑mount module suited for industrial installations.

This half‑bridge layout makes it directly usable in three‑phase inverter legs or high‑power DC‑AC conversion blocks without discrete assembly.

🌡️ Thermal & Environmental Characteristics

Efficient heatsinking and proper torque mounting are essential due to the high current and power dissipations involved.

⚙️ Switching Characteristics & Performance

Switching parameters vary with operating conditions, but typical features include:

• Fast switching capability suitable for PWM (Pulse Width Modulation) inverters.

• Integrated diodes support free‑wheeling current in inductive loads.

• Designed for medium–high frequency operation in industrial converters.

These characteristics enable efficient conduction and reduced switching losses compared to discrete power transistors.

🔌 Typical Applications

The CM600DU‑24NF module is widely used in applications such as:

• Three‑phase inverters for AC motor drives and servo systems.

• High‑power UPS systems and power supplies.

• Renewable energy converters (solar/wind).

• Traction and industrial automation systems.

Its high current and voltage ratings make it suitable for bulk power conversion rather than low‑power or consumer electronics.

Additional Information:

• Item Code: CM600DU-24NF
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Product Details:

📌 General Overview

The PM20CSJ060 is a three‑phase Intelligent Power Module (IPM) based on Insulated Gate Bipolar Transistor (IGBT) technology. It is typically manufactured under the Powerex Intellimod™ series and integrates power switching devices with built‑in gate drive and protection logic, making it suitable for compact inverter and control systems.

⚡ Key Electrical Specifications

Voltage Ratings and Protection:

• Collector‑emitter dc rating: 600 V

• Maximum surge voltage across P‑N supply ~500 V (depending on application)

🧠 Integrated Features

Unlike basic IGBT bricks, the PM20CSJ060 includes built‑in control and protection logic, commonly found in IPM/Intellimod modules:

✔ Protection Logic

Built‑in detection and protective shutdown mechanisms include:

• Short‑Circuit protection

• Over‑Current protection

• Over‑Temperature protection (OTP)

• Under‑Voltage Lockout (UVLO) for safe operation and motor/inverter protection

🔧 Internal Configuration & Operation

The PM20CSJ060 integrates a three‑phase IGBT inverter bridge (six switching elements with free‑wheel diodes) plus internal gate drivers and protection into one compact module. Communication between control inputs and power switches is done via dedicated internal circuitry.

🪛 Thermal & Mechanical Characteristics

• Junction‑to‑Case Thermal Resistance: ~2.2 °C/W per IGBT and ~4.5 °C/W per diode (typical)

• Case Operating Temp: –20°C to +100°C

• Storage Temp: –40°C to +125°C

• Package: Power module with chassis mount capability and multi‑pin connector layout (~23 pins)

📍 Typical Performance Characteristics 🧰 Typical Applications

The PM20CSJ060’s ratings and integrated protections make it well‑suited for:

• Three‑phase inverters for motors and actuators

• UPS (Uninterruptible Power Supplies)

• Servo and motion control drives

• Industrial power supplies and converters

• HVAC inverter stages

Additional Information:

• Item Code: PM20CSJ060
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Product Details:

1. General Description

The FP50R12KS4C is a Power Integrated Module (PIM) IGBT module designed for medium-power industrial power-conversion systems. It integrates several power components—including inverter IGBTs, rectifier diodes, and a braking chopper—into one compact module.

This integration reduces the number of external components required and simplifies inverter design for motor-drive and power-conversion applications.

2. Internal Configuration

The module typically integrates a complete power stage, including:

• Three-phase IGBT inverter bridge

• Free-wheeling diodes

• Rectifier diode bridge

• Brake chopper IGBT

• Brake chopper diode

• NTC thermistor for temperature monitoring

This architecture allows the module to perform rectification, inversion, and braking functions in a single unit.

3. Key Electrical Specifications

These ratings allow the module to operate efficiently in medium-power inverter systems.

4. Thermal and Mechanical Characteristics

• Package type: EconoPIM™ 3 / AG-ECONO3

• Mounting: Chassis-mount power module

• Isolation voltage: about 2.5 kV between terminals and baseplate

• Operating temperature range: −40 °C to +125 °C

• Weight: approximately 300 g

The module uses an Al₂O₃ ceramic substrate to provide electrical isolation and efficient heat transfer to the heatsink.

5. Key Technical Features

• Integrated converter, inverter, and braking stage

• Low switching losses and fast switching performance

• High short-circuit capability (~10 μs)

• Low stray inductance design

• Integrated temperature sensor (NTC)

• High reliability for industrial power electronics systems.

6. Typical Applications

The FP50R12KS4C IGBT module is widely used in:

• Industrial AC motor drives

• Variable Frequency Drives (VFD)

• Uninterruptible Power Supplies (UPS)

• Renewable energy inverters

• Welding equipment

• Battery charging and power converters.

                                                                                                                                            

Additional Information:

• Item Code: FP50R12KS4C
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Product Details:

1. General Description

The FS450R12KE3 is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for industrial power electronics. It integrates multiple IGBT switches and free-wheeling diodes inside a single package to perform efficient high-power switching in inverter and converter systems.

The module belongs to the EconoPACK™+ family and uses TRENCHSTOP™ IGBT3 technology, which provides low conduction losses, improved switching performance, and high reliability for demanding applications.

2. Basic Electrical Ratings

These characteristics allow the module to handle very high power switching in inverter systems.

3. Internal Configuration

The module uses a six-pack topology, meaning it contains six IGBT switches arranged as a three-phase bridge inverter.

Typical structure:

• 6 IGBT transistors

• 6 anti-parallel freewheeling diodes

• Isolated baseplate for heat transfer

• Internal bond wires and copper busbars

This configuration allows the module to directly drive three-phase AC loads such as motors.

4. Key Technical Features

High power capability

• Supports up to 450 A current and 1200 V voltage.

Low switching and conduction losses

• Trench IGBT technology reduces energy loss and improves efficiency.

High thermal performance

• Optimized thermal resistance and baseplate for efficient heat dissipation.

Short-circuit protection capability

• Designed to withstand short circuits for about 10 µs.

Low internal inductance

• Helps reduce voltage spikes during switching.

Integrated free-wheel diodes

• Provide reverse current path during switching operations.

5. Mechanical Characteristics

• Package: EconoPACK™+ B module

• Dimensions: approx. 162 × 150 mm

• Weight: about 0.9 kg

• Mounting: Screw mounting with baseplate cooling

• Isolation voltage: approx. 2.5 kV between terminals and heatsink.

6. Typical Applications

The module is widely used in high-power industrial systems, including:

• Variable Frequency Drives (VFD) for motors

• Industrial inverters and converters

• Renewable energy systems (solar/wind inverters)

• UPS (Uninterruptible Power Supplies)

• Welding power supplies

• Electric traction systems.

Additional Information:

• Item Code: FS450R12KE3
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Product Details:

General Overview – SKKH57016E IGBT Module

Type: IGBT (Insulated Gate Bipolar Transistor)
Configuration: Typically a single IGBT with anti-parallel diode, often used in discrete modules for switching or inverter applications.

Electrical Ratings:

• Collector-emitter voltage (V_CE): 1600 V

• Continuous collector current (I_C): 57 A (at 25 °C, typically)

• Surge/peak collector current (I_CM): Higher, for short pulses (depends on datasheet)

• Gate-emitter voltage (V_GE): ±20 V maximum

• Collector-emitter saturation voltage (V_CE(sat)): Low, for efficient switching

Thermal & Mechanical Features:

• Package type: Standard TO-247 (or similar) for discrete high-power IGBT

• Mounting: Screw or bolt for heatsink attachment

• Operating junction temperature (T_J): -40 °C to +150 °C (typical)

• Cooling method: Baseplate to heatsink; conduction cooling required

Key Characteristics:

• Fast switching capability suitable for inverters and choppers

• Anti-parallel diode included, for freewheeling current in switching applications

• Rugged design for industrial and power electronics applications

Typical Applications:

• Industrial motor drives (VFDs)

• UPS (Uninterruptible Power Supplies)

• Traction and power conversion systems

• High-power switch-mode circuits                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                               

Additional Information:

• Item Code: SKKH57016E
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Product Details:

1. General Description

The SKM200GAH126DKL is a high-power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Semikron. It is designed for high-voltage and high-current switching applications in power electronic systems.

The module integrates IGBT switches and fast free-wheel diodes in a compact module package with an isolated baseplate, allowing efficient heat dissipation and easy mounting on a heatsink.

It is widely used in industrial inverters, motor drives, UPS systems, and renewable energy converters.

2. Internal Structure

The SKM200GAH126DKL typically contains:

• 2 IGBT transistors

• 2 anti-parallel free-wheel diodes

• Direct Copper Bonded (DCB) substrate

• Isolated baseplate for thermal management

This arrangement usually forms a half-bridge power module used in inverter circuits.

3. Key Features

• High voltage capability 1200 V

• Nominal current 200 A

• Low collector-emitter saturation voltage (VCE(sat))

• Fast switching performance

• Integrated free-wheel diodes

• High short-circuit capability

• Isolated baseplate for easy heatsink mounting

• Reliable operation at high temperatures

4. Absolute Maximum Ratings 5. Electrical Characteristics 6. Thermal Characteristics 7. Mechanical Characteristics

• Package type: SEMITRANS power module

• Weight: approximately 325 g

• Mounting: screw-mounted on heatsink

• Electrical isolation between baseplate and semiconductor chips

8. Operating Principle

1. A gate voltage signal is applied to the IGBT.

2. The IGBT switches ON, allowing current flow from collector to emitter.

3. When the gate signal is removed, the device turns OFF.

4. The anti-parallel diode conducts reverse current during inductive load operation.

9. Typical Applications

The SKM200GAH126DKL module is commonly used in:

• Industrial motor drives

• Variable Frequency Drives (VFD)

• UPS systems

• Renewable energy inverters

• Power converters

• Industrial automation equipment

Additional Information:

• Item Code: SKM200GAH126DKL
• Production Capacity: READY STOCK
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Product Details:

. General Description

The 2MBI450VE-120 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. It combines IGBT switches and freewheeling diodes in a compact, high-current package. This module is optimized for high-efficiency switching and low power loss in medium-voltage applications.

Typical Applications:

• AC motor drives (industrial motors, pumps, fans)

• UPS systems

• Power inverters (solar, wind)

• Welding machines

• Induction heating

2. Key Features

• High Current Capability: 450 A per module (as suggested by the “450” in the part number)

• Voltage Rating: 1200 V DC blocking voltage

• Low Saturation Voltage: Minimizes conduction losses

• High Switching Speed: Enables efficient PWM (Pulse Width Modulation) control

• Anti-parallel Freewheeling Diodes: For energy recovery and handling inductive loads

• Compact, robust module package: Simplifies mounting and cooling

• Built-in emitter terminals: Reduces wiring inductance

3. Electrical Specifications (Typical) 4. Thermal and Mechanical

• Package Type: Standard Mitsubishi VE module (flat, insulated baseplate)

• Cooling Method: Baseplate is mounted on a heatsink with thermal interface material (TIM)

• Thermal Resistance: ~0.1–0.2 °C/W (junction to case, depending on datasheet)

• Dimensions: Compact module; standard bolt-hole mounting

5. Pin Configuration

The VE module typically has:

• 3 input terminals (IGBT collector terminals)

• 3 output terminals (IGBT emitter terminals)

• Gate and emitter terminals for control

• Common emitter for diode return paths

6. Advantages

• High efficiency in medium-voltage applications

• Robust against overcurrent and short-duration overloads

• Reduces system size due to high current density

• Compatible with standard industrial gate drive circuits                                                                                                                                 

Additional Information:

• Item Code: 2MBI450VE-120
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Product Details:

📌 What It Is

The 7MBR75U4R120‑50 is a 1200 V, 75 A IGBT (Insulated‑Gate Bipolar Transistor) Power Integrated Module (PIM) manufactured by Fuji Electric (or equivalents in the “7MBR” family). It integrates multiple power semiconductor functions into one module, simplifying the design of motor drives and inverter systems.

IGBT technology combines the fast switching capability of MOSFETs with the high voltage/current handling of bipolar transistors, making it ideal for high‑power applications.

🧠 Module Architecture Integrated Power Stages (PIM)

Unlike a simple half‑bridge, this module typically includes:

• Three‑phase converter rectifier

• Inverter stage

• Brake circuit

• Freewheeling diodes

This “7‑in‑1” topology reduces external components and PCB complexity.

📍 Key Technical Characteristics Electrical Ratings

• Collector‑Emitter Voltage (VCES): 1200 V — high voltage class for motor/inverter use.

• Continuous Collector Current (Ic): 75 A — supports significant load current.

• Peak Pulsed Current (Icp): ~150 A — for short transient conditions.

• Gate‑Emitter Voltage (VGES): ±20 V — standard driving range for IGBTs.

• Power Dissipation (Pc): ~275 W — thermal design target under rated conditions.

Thermal & Environmental

• Max Junction Temperature: up to ~150 °C (module operational limit).

• Storage Temp Range: –40 °C to +125 °C.

• Mounting: PCB / screw type with recommended torque ~3.5 N·m (for reliable thermal contact).

Electrical Behavior

• Low On‑State Voltage (VCE(sat)): Typical ~1.8 V @ 75 A – indicates lower conduction loss, improving efficiency.

• Repetitive Peak Reverse Voltage (VRRM): ~1600 V for converter diodes — ensures ruggedness under inductive loads.

🛠️ Features & Benefits

👍 Integrated Solution — Combines rectifier, brake and inverter stages to reduce design complexity.
👍 Compact Package — Smaller footprint than equivalent discrete designs.
👍 Low Losses & High Efficiency — Enhanced switching and conduction characteristics.
👍 High Thermal Capacity — Supports operation in industrial environments with elevated temperatures.
👍 RoHS / Lead‑Free Compliance — Meets modern environmental standards.

📌 Typical Applications

This module is engineered for power conversion and motor control systems such as:

• Industrial motor drives / VFDs

• Uninterruptible Power Supplies (UPS)

• Servo amplifiers

• Renewable energy inverters

• Traction control and heavy‑load drives

Its high voltage/current rating and rugged construction make it suitable for both industrial and commercial power electronics.                                                                                                                                            

Additional Information:

• Item Code: 7MBR75U4R-120
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1. General Overview

The CM35MXB2‑24A is a medium‑power IGBT module (Insulated Gate Bipolar Transistor) manufactured by Mitsubishi Electric. It is designed to serve as the core of motor drive inverters and power conversion systems where efficient high‑frequency switching and robust current handling are needed.

• Device Type: IGBT Power Module

• Manufacturer: Mitsubishi Electric

• Part Number: CM35MXB2‑24A

• Voltage Class: 1200 V

• Current Rating: ~35 A continuous

• Package Type: Flat base insulated module

• Cooling: Heat‑sink mounting

• Purpose: Three‑phase AC inverter and brake/chopper integration in motor drives and converters

2. Key Electrical Specifications 3. Internal Circuit Configuration Integrated Components

The module typically integrates:

• IGBT power transistors arranged in a phase control or inverter topology

• Anti‑parallel diodes for reverse current conduction

• Converter + Inverter + Brake (“CIB”) circuitry in one package (integrated rectifier/inverter plus brake circuit)

• Isolated insulated baseplate for heat dissipation and electrical isolation

4. Main Features

Key features include:

• High voltage (1200 V) rating for robust industrial applications

• Moderate current handling (~35 A) for small to medium motor drives

• Integrated converter, inverter, and brake functions in one module

• Compact flat base package with copper baseplate for efficient thermal conduction

• RoHS‑compliant lead‑free construction for environmental safety

• Simplified design compared to discrete power stage components

5. Thermal & Mechanical Characteristics

• Flat base, isolated housing with copper base plate for efficient cooling

• Heat‑sink mounting required for continuous operation at rated current

• Moderate size and weight (~270 g) appropriate for compact drive units

• Screw connections for power and gate terminals

 

6. Typical Applications

The CM35MXB2‑24A module is often used in:

• Three‑phase motor drives and variable frequency drives (VFDs)

• Servo motor control systems

• Power converters for industrial equipment

• Braking chopper circuits for regenerative energy handling

• AC inverter systems for pumps, fans, and compressors

Additional Information:

• Item Code: CM35MXB2-24A
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Product Details:

1. General Overview

This module is designed for efficient high-power switching in industrial power conversion systems.

2. Key Electrical Specifications

These ratings allow the module to operate reliably in high-power industrial switching applications.

3. Internal Circuit Configuration Integrated Components

The module contains:

• 1 IGBT power transistor

• 1 fast recovery free-wheel diode (FWD)

• Isolated baseplate

• High-current power terminals

Internal Topology Collector (C)
|
|---- IGBT ----|
| |
| Diode
| |
Emitter (E)-------

The anti-parallel diode provides a current path during reverse current flow, which is important in inductive loads such as motors.

4. Main Features

Key features of the module include:

• Low collector-emitter saturation voltage

• High switching speed

• Integrated free-wheel diode

• High current density

• Low thermal resistance

• 2500 Vrms isolation

• Compact power module design

Some versions use advanced trench-gate or carrier-stored transistor structures that reduce conduction losses and improve efficiency.

5. Thermal Characteristics

Low thermal resistance allows efficient heat transfer from the semiconductor to the heat sink, improving reliability in high-power applications.

6. Typical Applications

The CM75YE13-12F module is widely used in:

• Industrial motor drives

• Variable Frequency Drives (VFD)

• Uninterruptible Power Supplies (UPS)

• Industrial welding equipment

• Power supplies

• Renewable energy converters (solar and wind systems)

These applications require efficient high-current switching and reliable power control.

Additional Information:

• Item Code: CM75YE13-12F
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Product Details:

1. General Overview

• Device Type: IGBT Power Module

• Configuration: 3-phase full-bridge inverter

• Package Type: EconoPACK / insulated baseplate module

• Manufacturer: Infineon Technologies

The module integrates six IGBTs and free-wheel diodes to form a complete three-phase inverter stage, which simplifies the design of motor drives and other power electronics equipment.

2. Key Electrical Specifications

These ratings allow the module to switch high voltage and moderate current in industrial power electronics systems.

3. Internal Circuit Configuration

The module contains:

• 6 IGBTs

• 6 anti-parallel free-wheel diodes

• Insulated metal baseplate for thermal management

Topology

• Three-phase full bridge inverter

• Used to convert DC power into three-phase AC power.

This configuration is widely used in motor control and inverter applications.

4. Important Features

• Low conduction losses for higher efficiency

• Fast switching performance

• High short-circuit capability

• Positive temperature coefficient (safe parallel operation)

• Robust insulated baseplate for good thermal dissipation

These characteristics help increase reliability in industrial equipment.

5. Mechanical Characteristics

The baseplate improves heat transfer from the IGBT chips to the cooling system.

6. Typical Applications

The module is widely used in:

• AC motor drives

• Variable frequency drives (VFD)

• Industrial inverters

• Uninterruptible Power Supply (UPS)

• Solar inverter systems

• Welding machines

These systems require efficient high-power switching and reliable thermal performance.

7. Working Principle

1. A gate voltage (~15 V) is applied to the IGBT.

2. The IGBT turns ON, allowing current to flow from collector to emitter.

3. Removing the gate signal turns the device OFF.

4. The free-wheel diodes conduct reverse current during switching.

This switching action enables DC-to-AC conversion in inverter circuits.

Additional Information:

• Item Code: BSM50GD120DN2E3226
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Product Details:

General Overview

The VUB145‑16NOXT from Littelfuse / IXYS is a three‑phase bridge rectifier with brake unit and IGBT/diode combination module designed for heavy‑duty power conversion tasks — typically used in motor drives, power supplies, inverter systems, and industrial automation. It is housed in an E2 pack with DCB (Direct Copper Bond) baseplate for robust thermal and electrical performance.

Unlike discrete IGBT modules that just switch current, this part integrates a three‑phase rectifier bridge plus braking circuitry optimized for drive applications, combining bidirectional control elements and fast recovery diodes.

⚡ Key Electrical Characteristics Voltage & Current Ratings

• Peak Repetitive Reverse Voltage (V_RRM): 1600 V — high blocking capability in rectifier and brake circuits.

• Collector‑Emitter Voltage (V_CES): 1200 V — suitable for typical industrial DC link voltages.

• Average Continuous Current: 150 A — typical forward rectified current rating.

• Collector (or Effective Load) Current @ 80 °C: ~140 A.

• Freewheeling Diode Forward Voltage (V_F): ~1.68 V at rated current.

• Forward Surge Current: ~1100 A (peak) — supports transient high load conditions.

• Rate of Rise of Current (di/dt): ~1000 A/µs — indicates dynamic capability.

🔌 Device Functionality & Topology

• Topology: Three‑phase bridge rectifier with brake unit — integrates IGBT(s) with freewheeling/rectifier diodes.

• NTC Thermistor: Integrated for temperature monitoring and protection in drive circuits.

• Package Type: E2 Pack (PCB mount with lead terminals) — compact and rugged industrial format.

🌡️ Thermal & Environmental Specifications

• Maximum Junction Temperature (T_j): ~150 °C — typical limit for heavy industrial duty.

• Case Temperature Rating: ~105 °C rated under load conditions.

• Thermal Resistance (R_th(j‑c)): ~0.5 K/W (junction to case).

• Operating Ambient Range: –40 °C to ~150 °C (junction).

• Isolation Voltage: Typically ~3600 V AC (module to heatsink).

🧱 Construction & Features

• Chip Technology: X2PT (2nd‑generation Xtreme Light Punch Through) — rugged switching and low on‑state voltage drop.

• DCB Baseplate: Direct Copper Bond improves thermal cycling, heat conduction, and mechanical strength.

• Thin Wafer & Planar Passivated Chips: Ensure reduced forward voltage and improved power cycling.

• Short‑Circuit Withstand: Designed for brief (~10 µs) short‑circuit pulses without catastrophic failure.

📍 Typical Applications

This module is tailored for industrial power electronics applications requiring robust three‑phase AC‑to‑DC conversion and braking support:

• Motor drives and variable frequency drives (VFDs) — rectifier + brake section in drive front ends.

• Industrial inverters and converters — DC link rectification with braking control.

• Renewable energy power stages — grid‑tie and storage inverter front ends.

• Power supplies — high‑power rectification and dynamic braking circuits.

Additional Information:

• Item Code: VUB14516NOXT
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General Overview of MMGTU75QC120H6C IGBT Module

Type: IGBT (Insulated Gate Bipolar Transistor) power module
Configuration: Likely a half-bridge module (IGBTs + freewheeling diodes)

Key Ratings:

• Collector-emitter voltage (V_CE): 1200 V

• Continuous collector current (I_C): 75 A

• Surge current capability: Higher than I_C for short pulses

• Gate drive voltage: Standard IGBT control (~15 V)

Thermal & Mechanical:

• Package type: High-power module (H6C package)

• Cooling method: Baseplate heatsink (forced air or liquid)

• Operating junction temperature: Typically up to 150 °C

• Isolation voltage: High dielectric strength for industrial use

  1. Manufacturer and Series

  The code resembles the naming conventions used by Mitsubishi Electric for IGBT modules, though other manufacturers may have similar codes. This is likely a high-power IGBT module designed for industrial applications such as motor drives, inverters, and power converters.

  2. Basic Specifications (from the code)

  Let’s decode the part number logically:

  • MMGTU – Likely the series/family of the IGBT module. Typically, MMGT modules are high-efficiency power modules.

  • 75 – Usually represents current rating, so 75 A.

  • QC – May refer to the module configuration (e.g., half-bridge, three-phase bridge). QC often stands for a six-pack or two-in-one IGBT + diode configuration, depending on the manufacturer.

  • 120 – Most likely voltage rating, meaning 1200 V.

  • H6C – Package or module variant (H-series package with specific thermal and mechanical characteristics).

  3. Electrical Characteristics

  Based on similar modules:

  • Collector-emitter voltage (V_CE): 1200 V

  • Continuous collector current (I_C): 75 A

  • Surge current: Typically 2–3× I_C for short durations (depends on manufacturer)

  • IGBT type: Likely IGBT + freewheeling diode in half-bridge configuration.

  • Switching frequency: Usually up to 10–20 kHz in industrial inverters.

  • Gate voltage: Typical control voltage ±15 V

  4. Thermal and Mechanical Features

  • Package type: High-power module (likely H-series or press-pack style)

  • Mounting: Screw terminals on ceramic substrate for good heat conduction

  • Operating temperature: Junction up to 150°C typically

  • Cooling: Baseplate designed for liquid or forced-air cooling

  • Isolation voltage: Usually 2500–4000 V AC between terminals and baseplate

  5. Applications

  • Industrial motor drives

  • Renewable energy inverters (solar, wind)

  • UPS and traction systems

  • High-power switching circuits

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📌 1. General Description

The 1MBI600VF‑120 is a single‑pack IGBT (Insulated Gate Bipolar Transistor) power module from Fuji Electric’s V‑Series, engineered for high‑current, high‑voltage switching. It is commonly used in industrial inverters, motor drives, UPS (uninterruptible power supplies), welding machines, and renewable energy converters.

⚡ 2. Key Electrical Ratings 🔌 3. Internal Configuration and Function

• IGBT Switch: Acts as a controllable DC switch — turns on/off via gate voltage to modulate power flow.

• Free‑Wheeling Diode: Placed in anti‑parallel with the IGBT to provide a safe path for inductive load current when the IGBT turns off.

• Module Structure: Low‑inductance layout for high‑speed switching with reduced voltage overshoot and switching losses.

This 1‑in‑1 package design lets engineers implement flexible topologies, such as:

• Half‑bridge stages

• Full‑bridge inverters

• Choppers and DC–DC converters

• Custom multi‑level converters

📊 4. Electrical Characteristics

Typical device characteristics from the official datasheet include:

• Collector‑Emitter Saturation Voltage (V_CE(sat)): ~2.1–2.5 V at 600 A (T_j = 25 °C)

• Leakage Currents: Low collector and gate leakage at rated conditions

• Threshold Voltage (V_GE(th)): ~6–7 V for turn‑on

• Input Capacitance: Moderate, typical of high‑current IGBTs (tens of nF)

• Internal Gate Resistance (R_g(int)): ~1–2 Ω

 

📦 6. Mechanical and Packaging

• Package type: Industrial M153 style with screw/bolt terminals

• Size: ~108 mm × 62 mm (L × W)

• Mass: ~380 g

• Baseplate: Electrically insulated for safe mounting on heatsinks

⚙️ 7. Typical Applications

The 1MBI600VF‑120 is widely used in:

• Industrial motor drives and inverters

• Uninterruptible Power Supplies (UPS)

• Welding machines and induction heaters

• Renewable energy inverters (solar and wind)

• HVAC compressors and general power supplies

• Power conversion stages for heavy machinery

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• Item Code: 1MBI600VF-120
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Product Details:

📌 1. General Overview

The 6MBP160RUA060 is a 600 V / 160 A Intelligent Power Module (IPM) from Fuji Electric’s U‑Series family. It integrates multiple Insulated‑Gate Bipolar Transistors (IGBTs), free‑wheeling diodes, gate drive circuitry, and protection logic into a single compact package suitable for three‑phase inverter use in industrial environments.

⚡ 2. Key Electrical Ratings 🔌 3. Module Configuration & Internal Architecture

The 6MBP160RUA060 is a highly integrated three‑phase bridge module with the following internal building blocks:

🔹 Three‑Phase Inverter Bridge
Six IGBTs (pairs per phase) with anti‑parallel free‑wheeling diodes provide the core AC output switching stage.

🔹 Gate Drive & Protection Logic (Integrated)
Built‑in gate drive circuits reduce external components and simplify control. Protection features include:

• Over‑current protection (OC)

• Short‑circuit protection (SC)

• Over‑temperature protection (OT)

• Under‑voltage lockout (UVLO)
  These features help safeguard the module under abnormal operating conditions without external driver ICs.

🔹 Thermal Sensor (NTC Thermistor)
Some variants include a temperature sensor on the die to provide thermal feedback to the controller.

🛠️ 4. Electrical & Switching Characteristics

• Low conduction and switching losses are achieved using Fuji’s U‑Series IGBTs, optimized for industrial PWM applications.

• Low stray inductance layout improves switching performance and reduces voltage overshoot during fast transitions — critical in inverter operation at tens of kHz.

• Short‑circuit protection limits device stress during fault conditions by detecting abnormal currents and gating off IGBTs.

 

📦 5. Mechanical & Thermal Design

• Package Type: Intelligent Power Module (IPM) with multiple power and control pins.

• Build: Composite power module with IGBT cells, diodes, driver ICs, and protection circuits potted in a thermally conductive encapsulate.

• Heat Dissipation: Must be mounted with good thermal interface material to a heatsink to ensure high power operation.

• Mounting: Module typically has screw/bolt terminals and insulated baseplate for heat sink attachment.

 

🎯 6. Typical Applications

• Three‑Phase AC Motor Drives (VFDs)

• Industrial Inverters

• Servo and Motion Control Systems

• Uninterruptible Power Supplies (UPS)

• Renewable Energy Power Electronics

• Automation and Robotics Drives

Additional Information:

• Item Code: 6MBP160RUA060
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Product Details:

1. General Description

The 7MBR150XRE120‑50 is a PIM (Power Integrated Module) that integrates:

• Inverter IGBTs

• Fast recovery diodes

• Converter rectifier bridge

• Dynamic brake circuit

Primary Use Cases:

• AC motor inverters

• NC servo drives

• UPS (Uninterruptible Power Supplies)

• Industrial power converters

2. Key Features

• Voltage Class: 1200 V DC blocking voltage

• Current Rating: ~150 A inverter section

• X‑Series (7th Gen) IGBT technology: Lower losses, improved switching performance

• Low V_CE(sat): Reduces conduction losses

• Compact PCB mount package (M720)

• Integrated brake and rectifier circuits: Reduces system part count

• Wide operating temperature range

• RoHS compliant

3. Electrical Specifications 4. Internal Configuration

As a Power Integrated Module, this device typically contains:

• A 3‑phase inverter bridge (six IGBTs)

• A converter diode bridge

• A dynamic brake circuit

• Fast recovery diodes for each leg

5. Operating Principle

1. DC Input: A DC link voltage (e.g., from a rectified AC source) is supplied to the module.

2. Gate Drive: External gate drive signals (±15 V typical logic) are applied to the IGBT control pins.

3. Switching: The IGBTs switch in PWM patterns to synthesize a 3‑phase AC output.

4. Free‑wheel Diodes: Provide current paths during device off‑states in inductive loads.

5. Brake/Converter Functions: The integrated circuits handle energy return and regenerative braking duties, reducing external parts.

6. Thermal and Mechanical Notes

• Heatsinking: The module must be mounted on a heatsink with thermal interface material for efficient cooling.

• Insulated Baseplate: Provides electrical isolation from heatsink.

• Solder Pin Terminals: Designed for PCB mounting or wire‑bond connections.

• Operating junction temps are designed to tolerate harsh industrial environments.

7. Typical Applications

This module is widely used in:

• Industrial inverters and motor drives

• NC servo systems

• Uninterruptible power supplies (UPS)

• Medium‑power AC drives

• Power conversion systems with braking/regeneration

Additional Information:

• Item Code: 7MBR150XRE120
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Product Details:

1. General Overview

The module is designed for high-power switching applications such as industrial drives and power converters.

2. Key Electrical Specifications

These ratings allow the module to operate in medium- to high-power industrial inverter systems.

3. Internal Circuit Configuration Integrated Devices

The module typically integrates:

• IGBT power transistors

• Fast recovery free-wheel diodes

• Internal bus connections

• Thermal baseplate

Topology

Many Fuji 150 A modules are designed as a three-phase inverter (6-pack) structure.

Phase U : Upper IGBT + Diode
Lower IGBT + Diode

Phase V : Upper IGBT + Diode
Lower IGBT + Diode

Phase W : Upper IGBT + Diode
Lower IGBT + Diode

This configuration forms a complete three-phase inverter bridge used in motor drive systems.

4. Main Features

Key features of the module include:

• High current capability (150 A)

• 600 V voltage class

• Integrated free-wheel diodes

• Low conduction and switching losses

• Compact power module package

• High thermal efficiency

• High reliability for industrial use

These characteristics improve system efficiency and simplify inverter design.

5. Mechanical Characteristics

The isolated baseplate allows the module to be mounted directly onto a heat sink for effective thermal dissipation.

6. Typical Applications

The 6MBP150VCC-060 module is widely used in:

• Industrial motor drives

• Variable Frequency Drives (VFD)

• Uninterruptible Power Supply (UPS)

• Servo drive systems

• Welding machines

• Industrial automation equipment

These applications require efficient high-current switching and reliable power control.                                                                            

Additional Information:

• Item Code: 6MBP150VCC060
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