Sanghvi Electronics

Technical Description Device Type

• IGBT Power Module
• Manufacturer: Infineon Technologies
• Configuration:
  • Chopper / half-bridge type (reverse conducting IGBT module family)
• Package: 34 mm industrial module

This is not a six-pack or PIM, but a building block module typically used in inverter legs or DC chopper circuits.

Technology:

• TRENCHSTOP™ IGBT4 (Field-stop trench technology)
• Emitter Controlled Diode (EmCon4)
• Designed for:
  • Low switching losses
  • Low conduction losses
  • High efficiency at PWM switching

Optimized for high-frequency switching applications

Electrical Ratings

• Collector-emitter voltage (VCES): 1200 V
• Nominal collector current (IC): 150 A
• Peak collector current (ICRM): 300 A

Suitable for medium-to-high power industrial converters

On-State Characteristics

• Low VCE(sat) (positive temperature coefficient)
• Ensures:
  • Reduced conduction losses
  • Easier paralleling of devices

Switching Characteristics

• Fast switching IGBT4 design
• Features:
  • Low turn-on and turn-off losses
  • Soft recovery diode behavior

Ideal for:

• PWM inverters (kHz range)
• High-efficiency switching systems

Thermal Characteristics

• Max junction temperature (Tvj): 150 °C
• Isolated baseplate for efficient heat transfer

Supports robust industrial operation and thermal cycling

Mechanical / Package

• Module width: 34 mm standard housing
• Construction:
  • Copper baseplate (insulated)
  • Low stray inductance layout
• Designed for screw mounting on heatsink

Internal Structure

• IGBT switch + anti-parallel diode
• Reverse-conducting design (integrated diode path)

Used as:

• Single inverter leg
• DC chopper
• Building block for larger converters

Key Features

• Low switching losses
• Low VCE(sat)
• Positive temperature coefficient
• High thermal capability
• Rugged industrial module design
• Suitable for high-frequency PWM operation

Applications

Typical applications include:

• Motor drives (VFDs)
• UPS systems
• DC choppers
• Industrial inverters
• Renewable energy 

Technical Description Device Type

• IGBT Power Module
• Manufacturer: Infineon Technologies
• Configuration:
  • Chopper / half-bridge type (reverse conducting IGBT module family)
• Package: 34 mm industrial module

This is not a six-pack or PIM, but a building block module typically used in inverter legs or DC chopper circuits.

Technology:

• TRENCHSTOP™ IGBT4 (Field-stop trench technology)
• Emitter Controlled Diode (EmCon4)
• Designed for:
  • Low switching losses
  • Low conduction losses
  • High efficiency at PWM switching

Optimized for high-frequency switching applications

Electrical Ratings

• Collector-emitter voltage (VCES): 1200 V
• Nominal collector current (IC): 150 A
• Peak collector current (ICRM): 300 A

Suitable for medium-to-high power industrial converters

On-State Characteristics

• Low VCE(sat) (positive temperature coefficient)
• Ensures:
  • Reduced conduction losses
  • Easier paralleling of devices

Switching Characteristics

• Fast switching IGBT4 design
• Features:
  • Low turn-on and turn-off losses
  • Soft recovery diode behavior

Ideal for:

• PWM inverters (kHz range)
• High-efficiency switching systems

Thermal Characteristics

• Max junction temperature (Tvj): 150 °C
• Isolated baseplate for efficient heat transfer

Supports robust industrial operation and thermal cycling

Mechanical / Package

• Module width: 34 mm standard housing
• Construction:
  • Copper baseplate (insulated)
  • Low stray inductance layout
• Designed for screw mounting on heatsink

Internal Structure

• IGBT switch + anti-parallel diode
• Reverse-conducting design (integrated diode path)

Used as:

• Single inverter leg
• DC chopper
• Building block for larger converters

Key Features

• Low switching losses
• Low VCE(sat)
• Positive temperature coefficient
• High thermal capability
• Rugged industrial module design
• Suitable for high-frequency PWM operation

Applications

Typical applications include:

• Motor drives (VFDs)
• UPS systems
• DC choppers
• Industrial inverters
• Renewable energy 

Important:

• Turn-on: gate-triggered
• Turn-off: natural commutation (no gate turn-off)
  So it is fundamentally different from an IGBT.

Electrical Ratings

• Repetitive peak voltage (VDRM / VRRM): 1600 V
• Average current (ITAV): ~570–600 A @ Tc ≈ 85 °C
• Surge current (ITSM): 14,000 A (10 ms)
• I²t rating: ~980 kA²·s

Designed for very high-power industrial current control

On-State Characteristics

• Threshold voltage (VT0): ~0.8 V
• On-state resistance (rT): ~0.23 mΩ

Extremely low conduction losses at high current

Dynamic Characteristics

• Critical di/dt: ~200 A/µs

Requires:

• Proper gate triggering
• Snubber/protection circuits in fast transients

Thermal Characteristics

• Max junction temperature (Tj): 125 °C
• Thermal resistance (RthJC): ~0.058 K/W

Supports heavy-duty continuous operation

Mechanical / Package

• Housing: 60 mm Power Block
• Technology: Pressure-contact with insulated copper baseplate
• Construction: High mechanical robustness

Internal Structure

• 1 × Thyristor (SCR)
• 1 × Diode
• Typical configuration: half-controlled rectifier (common anode/cathode)

Used as a basic building block in high-power converters

Key Features:

• Pressure-contact technology → high reliability
• Electrically insulated baseplate → easy mounting
• Short-on-fail behavior (safe failure mode)
• High surge current capability
• Industrial standard package

Applications

Typical industrial uses include:

• Phase-controlled rectifiers                                                             
• Motor soft starters
• Power controllers                                                                        
• UPS rectifiers              
• Wind power converters
• Traction 

Technical Description Device Type

• IGBT Power Module (Six-pack inverter)
• Manufacturer: Infineon Technologies
• Configuration: 3-phase inverter bridge (6 IGBTs + 6 diodes)
• Module family: MIPAQ™ base / Econo-class

Designed as a compact, cost-optimized inverter module for industrial drives.

Technology

• TRENCHSTOP™ IGBT4 (E4 generation)
• Emitter Controlled Diode (EmCon4)
• Features:
  • Low switching losses
  • Low conduction losses
  • Soft diode recovery

Optimized for efficient PWM inverter operation

Electrical Ratings

• Collector-emitter voltage (VCES): 1200 V
• Nominal collector current (IC): 100 A (150 A @ 25°C max)
• Peak collector current (ICRM): 200 A
• Power dissipation (Ptot): ~515 W
• Gate-emitter voltage (VGES): ±20 V

Suitable for low-to-medium power inverter systems

On-State Characteristics

• VCE(sat): ~1.75 V (typical @ 25°C, 100 A)
• Positive temperature coefficient

Benefits:

• Lower conduction losses
• Easier paralleling of devices

Switching Characteristics

Typical switching parameters (100 A, 600 V):

• Turn-on delay: ~0.16 µs
• Turn-off delay: ~0.37–0.48 µs
• Turn-on energy (Eon): ~4–7.5 mJ
• Turn-off energy (Eoff): ~7.6–12.5 mJ

Designed for:

• PWM switching (kHz range)
• Efficient inverter operation with controlled EMI

Thermal Characteristics

• Operating junction temperature (Tvj): −40 °C to 150 °C
• Thermal resistance (RthJC per IGBT): ~0.29 K/W

Ensures:

• Reliable operation in industrial environments
• Good thermal cycling capability

Mechanical / Package

• Package type: MIPAQ™ base module
• Mounting: Chassis mount with PressFIT terminals
• Baseplate: Copper, electrically insulated
• Low stray inductance layout

Designed for:

• Easy assembly
• High mechanical reliability

Internal Structure

• 6 × IGBTs (3 high-side + 3 low-side)
• 6 × anti-parallel diodes
• Integrated NTC temperature sensor

Provides a complete 3-phase inverter stage in one module

Key Features

• Compact six-pack inverter design
• Low switching and conduction losses
• Integrated NTC temperature sensing
• PressFIT technology for reliable connections
• Cost-effective solution for industrial drives

Applications

Typical applications include:

• Variable Frequency Drives (VFDs)                             
• Industrial motor control                     
• HVAC systems                
• Renewable energy converters                                      
• UPS systems                       

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Key Features

• Integrated bridge: Six‑pack topology reduces component count and simplifies inverter design.
• PCB mountable compact package: Helps reduce footprint and improve thermal contact with heatsinks.
• Industrial grade reliability: Designed for demanding duty cycles with wide operating temperature range.

 

Typical Applications

The 6MBI150VX‑120‑50 module is widely used in:

• Three‑phase PWM motor drives and inverters
• Servo & motion control systems
• Uninterruptible Power Supplies (UPS)
• Power converters for industrial machines
• Renewable energy power stages (solar/wind)

General Overview

The GD75FFY120C5S is a 1200 V, ~75 A class IGBT module configured as a three‑phase full bridge (six‑pack). It uses advanced trench field‑stop (FS) IGBT technology for low conduction and switching losses, integrated freewheeling diodes, and robust thermal/voltage performance suitable for industrial drives, UPS inverters, and general power electronics.

IGBT (Power Switch)

• Collector–Emitter Voltage (V_CES): 1200 V DC blocking capability.

• Continuous Collector Current (I_C): 117 A @ T_C=25 °C (derated to ~75 A @ 100 °C).

• Pulsed Collector Current: ~150 A (1 ms pulse).

• Gate–Emitter Voltage (V_GE): ±20 V (standard IGBT gate drive).

• Collector–Emitter Saturation Voltage (V_CE(sat)): ~1.7 V typical — contributes to reduced conduction loss.

Diode / Freewheeling Elements

• Repetitive Peak Reverse Voltage (V_RRM): 1200 V.

• Diode Continuous Forward Current: ~75 A.

• Peak Diode Forward Current (1 ms): ~150 A.

Thermal & Environmental Properties

• Maximum Junction Temperature (T_jmax): ~175 °C.

• Operating Temperature Range: –40 °C to +150 °C.

• Storage Temperature: –40 °C to +125 °C.

• Isolation Voltage: ~4000 V RMS between module terminals and heatsink/baseplate (1 min @ 50 Hz).

• Power Dissipation (P_D): ~380 W at high junction temperature conditions.

Module Architecture & Construction

• Topology: Three‑phase full bridge inverter stage — six IGBTs plus six freewheeling diodes in one module.

• IGBT Technology: Advanced Trench Field‑Stop design for low on‑state voltage and improved switching performance.

• Short‑Circuit Capability: ~10 µs short‑circuit withstand capability typical of trench FS modules.

• Low Inductance Case: Helps reduce stray inductance and improve dynamic switching performance.

• Isolated Baseplate: Copper Direct Bonded Copper (DBC) baseplate for good thermal conduction and electrical isolation to the heatsink.

• Mounting: Press‑fit / PCB mounting style (module terminals designed for assembly into power assemblies).

Key Technical Features

• High Voltage and Current Capability: 1200 V / ~117 A class with pulse current headroom.

• Low Losses: Low V_CE(sat) trench IGBT technology and soft freewheeling diodes minimize conduction and switching losses.

• Thermal Robustness: High junction temperature rating ensures reliability under heavy loads and elevated temperatures.

• Integrated Bridge: Six‑pack inverter topology in a single module simplifies designs by reducing discrete parts and board space.

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