Sanghvi Electronics

1. General Overview

The MMK200T160UX is a three‑phase, high‑power thyristor + diode power module designed for industrial AC‑to‑DC conversion and controlled rectification applications.

• Module Type: Thyristor & diode power module (not a discrete IGBT)

• Manufacturer: MacMic Science & Technology Co., Ltd.

• Part Number: MMK200T160UX

• Application Class: High‑current rectification and controlled AC/DC conversion

2. Functional Configuration

• Purpose:

  • AC → DC rectification

  • Phase control (using thyristors)

  • Controlled DC output for drives and power supplies

3. Electrical Ratings

• Repetitive Peak Reverse Voltage (V_RRM): 1600 V

• Repetitive Peak Off‑State Voltage (V_DRM): 1600 V

• Non‑Repetitive Peak Voltage (V_RSM): ~1700 V

• Average On‑State Current (I_T(AV)): 200 A (single phase, half‑wave, T_C=85 °C)

• RMS On‑State Current (I_T(RMS)): ~314 A

• Non‑Repetitive Surge On‑State Current (I_TSM): ~3500–3850 A (half cycle, 50/60 Hz)

• Fusing I²t: ~61 kA²s (half cycle)

4. Diode Section Ratings

• Output DC Current (I_D): 200 A (three‑phase, half‑wave, T_C=95 °C)

• Non‑Repetitive Surge Forward Current (I_FSM): ~2200–2400 A

• Diode Fusing I²t: ~24 kA²s

• Diode Junction Temp. Range: −40 °C to +150 °C

5. Conduction & Control Characteristics

• Thyristor Gate Control: Requires external gate drive circuitry for controlled rectification

• Forward Voltage Drop: Typical voltage vs. current characteristics shown in datasheet curves

• Thermal Impedance: Transient thermal characteristics define pulsed current performance

6. Thermal & Environmental Ratings

• Junction Temperature (Thyristor): −40 °C to +125 °C

• Junction Temperature (Diode): −40 °C to +150 °C

• Isolation Voltage (Module Case): ~3000 V (insulated package)

• Package Style: Electrically isolated module for heatsink mounting

7. Mechanical & Packaging

• Package Type: High‑power isolated module package

• Mounting: Screw or bolt mount (baseplate insulation)

• Isolation Structure: Ceramic or DBC substrate for high voltage isolation

8. Key Features

• ✔ 1600 V high blocking voltage

• ✔ 200 A average conduction capability

• ✔ High surge current tolerance (3500 A)

• ✔ Isolated module package (3000 V isolation)

• ✔ Three‑phase bridge configuration

• ✔ Suitable for controlled rectifier applications

9. Typical Applications

• ⚡ Three‑phase rectifier bridges

• 🔌 Controlled DC power supplies

• 🔋 Battery chargers and industrial converters

• ⚙️ Power factor correction front‑ends (controlled)

7MBR75XME120  FUJI IGBT MODULE
7MBR75UP4120  FUJI IGBT MODULE
7MBR75XRE120  FUJI IGBT MODULE
7MBR75XPE120  FUJI IGBT MODULE

1. Device Type & Function

• Type: Three‑phase bridge rectifier module
• Technology: Standard power diode (not switching device like IGBT)
• Function: Converts 3‑phase AC → DC for high‑power industrial systems

�� Typically used as:

• Input rectifier stage before IGBT inverters
• DC power supply front-end

2. Electrical Ratings

 

3. Internal Configuration

• Contains 6 power diodes arranged in a three‑phase full bridge
• Includes an NTC thermistor for temperature sensing
• Built on DCB (Direct Copper Bonded) ceramic substrate for thermal efficiency

Equivalent structure: 3-phase AC input → 6-diode bridge → DC output (+ / -)
+ NTC sensor 4. Mechanical & Packaging

• Package type: E3 industrial power module
• Mounting: Chassis / heatsink mounted
• Construction:
  • Copper baseplate
  • Ceramic insulation (high thermal conductivity)
• Designed for high power density and thermal cycling reliability

5. Thermal Characteristics

 

6. Key Features

• ✔ Very high current capability (900 A)
• ✔ Low forward voltage drop → reduced conduction losses
• ✔ Low leakage current
• ✔ Integrated NTC temperature sensor
• ✔ High surge current withstand (8 kA)
• ✔ Robust for industrial and traction environments

 

7. Applications

Typical uses include:

• Industrial motor drives (front-end rectifier)
• PWM inverter input stage
• DC power supplies
• Traction systems (railways, EV auxiliary systems)
• Welding and electroplating equipment                                                                                                                                                                                                                                                                        

 

 

🔌 General Overview

The SKIIP24NAB126V10 is a MiniSKiiP® 2 series IGBT power module that integrates key AC–DC and DC–AC conversion stages into a single compact unit for use in industrial power electronics such as variable frequency drives (VFDs), inverters, UPS systems, and renewable energy power stages.

• Description: 3‑phase bridge rectifier + brake chopper + 3‑phase bridge inverter
• Topology: CIB (Converter–Inverter–Brake)
• Package: MiniSKiiP® 2 (screw‑mount)
• Mounting style: Press‑fit power terminals plus screw to heatsink
• Typical use: AC mains front end and inverter stage combined into one module.

⚙️ Electrical Characteristics 🔹 Voltage Ratings

• Maximum Collector–Emitter Voltage (V_CES): 1200 V — suitable for DC links derived from 3‑phase mains up to ~800–1000 V DC.

🔹 Current Ratings

• Nominal continuous current: ~40 A class (module family typical)
• Pulsed current capability: High short‑term pulses (e.g., up to ~700 A for brief intervals, dependent on cooling and duty).

🔹 Gate & Drive

• Gate‑Emitter Voltage (V_GES): ±20 V typical
• Integrated NTC thermistor for temperature sensing and protection feedback.

🔧 Integrated Functional Blocks

The CIB architecture integrates these key stages:

1. 3‑Phase Rectifier (Converter)
   • Built‑in diode bridge converts AC mains to DC link.
2. Brake (Boost) Chopper
   • Regulates DC‑link voltage under regenerative loading via external brake resistor.
3. 3‑Phase Inverter (Six‑Pack)
   • Six IGBTs form the inverter bridge for PWM AC output generation.
4. Freewheeling Diodes
   • Anti‑parallel diodes ensure current continuity during switching.
5. Temperature Sensing
   • Internal thermistor facilitates control logic for overtemperature protection.

Result: A complete AC–DC–AC converter power block that reduces external components and simplifies system layout.

⚡ Semiconductor & Package Technology

• IGBT technology: Low‑loss, high‑efficiency switching devices suited for industrial PWM operation.
• Integrated freewheeling diodes: Matched to IGBTs for efficient current commutation.
• MiniSKiiP® 2 pressure contact / press‑fit terminals:
  • Solder‑free power connections improve mechanical reliability and thermal cycling performance.
  • Heatsink mounting with screws ensures good thermal conduction.

🌡️ Thermal & Mechanical Features

• Package size: Typical MiniSKiiP® 2 module footprint (~59 × 52 × 16 mm).
• Weight: ~100 g (module with standard housing).
• Designed for efficient heat removal via heatsink and thermal interface. Operating junction temperature ranges and case limits are specified in the datasheet.

🔋 Typical Applications

• Three‑phase motor drives and VFDs
• Uninterruptible Power Supplies (UPS)
• Photovoltaic / renewable energy inverters
• Industrial and automation power converters
• General AC–DC–AC power stages requiring high integration and reliability.

📌 General Overview

The SKIIP13AC12T4V1 is a MiniSKiiP® 1 IGBT power module developed by Semikron Danfoss.

It is a 3-phase inverter (six-pack IGBT module) designed for DC–AC conversion in industrial drive systems.

• Configuration: Three-phase bridge inverter
• Integration level: Inverter stage only (no rectifier or brake chopper)

👉 Used as the output stage of variable frequency drives (VFDs).

⚙️ Electrical Characteristics 🔹 Voltage & Current Ratings

• Collector-emitter voltage (VCES): 1200 V
• Nominal collector current (ICnom): ~25 A
• Maximum collector current:
  • ~41 A (25°C case)
  • ~34 A (70°C case)
• Pulsed current (ICRM): ~75 A
• Gate-emitter voltage (VGES): ±20 V

👉 Higher current capability compared to SKIIP12 series.

🧩 Internal Topology ✔️ Six-Pack Inverter Structure

The module contains:

• 6 × IGBTs (3 half-bridges)
• 6 × anti-parallel freewheeling diodes

🔹 Terminal Structure

• DC+ and DC− inputs
• U, V, W outputs (3-phase)

👉 Function:

• Converts DC → 3-phase AC using PWM switching

👉 Classified as a “3-phase bridge inverter module”

⚡ Semiconductor Technology

• Trench 4 IGBT technology
  • Lower conduction losses
  • Improved switching efficiency
• CAL (Controlled Axial Lifetime) diodes
  • Soft recovery
  • Reduced switching stress
• Low-inductance internal layout
  • Improved EMI performance

👉 Ensures high efficiency and reliable switching

🌡️ Thermal Characteristics

• Junction temperature (Tj): −40°C to +175°C
• Recommended operation: up to 150°C
• Case temperature (Tc): max 125°C
• Integrated NTC thermistor for temperature sensing

👉 Enables:

• Thermal monitoring
• Overtemperature protection

🏗️ Mechanical Features

• Package: MiniSKiiP® 1
• Construction: Baseplate-less (DCB substrate)
• Mounting: Screw-mounted on heatsink
• Connections:
  • Spring contacts
  • Press-fit terminals

👉 Advantages:

• No solder fatigue
• High reliability under vibration
• Easy assembly

🔋 Applications

Typical applications include:

• Industrial motor drives (~7.5 kW)
• Variable Frequency Drives (VFDs)
• Servo drives
• Small inverter systems (up to ~14 kVA)

🧠 Functional Description

The module operates as a three-phase inverter stage:

1. DC link voltage applied to DC terminals
2. IGBT switching (PWM) generates AC waveform
3. Freewheeling diodes carry reverse current
4. NTC sensor monitors temperature

👉 Output: controlled 3-phase AC for motor operation

 

�� General Overview

The SKIIP12NAB12T4V1 is a MiniSKiiP® 1 intelligent IGBT module developed by Semikron Danfoss.

It is a CIB (Converter–Inverter–Brake) module, integrating a complete power conversion system:

• 3-phase diode rectifier
• Brake chopper
• 3-phase IGBT inverter
• Freewheeling diodes
• NTC temperature sensor

�� This module provides a fully integrated AC–DC–AC solution in a compact package.

⚙️ Electrical Characteristics �� Voltage & Current Ratings

• Collector-emitter voltage (VCES): 1200 V
• Collector current (IC): ~15 A
• Pulsed collector current: up to ~45 A
• Gate-emitter voltage (VGES): ±20 V

�� Suitable for medium power applications (~5.5 kW range).

�� Internal Topology

The module integrates three major stages:

1. Rectifier Stage (Converter)

• 3-phase diode bridge
• Converts AC → DC

2. Brake Chopper

• Dissipates regenerative energy
• Protects DC-link voltage

3. Inverter Stage

• 3-phase IGBT bridge (six-pack)
• Converts DC → controlled AC (PWM output)

�� Overall structure:
Rectifier + Brake Chopper + Inverter (CIB topology)

⚡ Semiconductor Technology

• Trench 4 IGBT technology
  • Low conduction losses
  • High switching efficiency
• CAL (Controlled Axial Lifetime) diodes
  • Soft recovery behavior
  • Reduced switching stress
• Low-inductance internal design
  • Improved EMI performance

�� Ensures high efficiency and reliability.

��️ Thermal & Protection Features

• Integrated NTC thermistor for temperature sensing
• Designed for efficient heat dissipation (DCB substrate)
• Short-circuit capability within safe operating limits

�� Enables:

• Real-time temperature monitoring
• Overtemperature protection

��️ Mechanical Characteristics

• Package: MiniSKiiP® 1
• Mounting: Screw-mounted on heatsink
• Electrical connection: Press-fit + spring contacts
• Weight: ~55–60 g

�� Advantages:

• No solder fatigue
• High mechanical reliability
• Easy assembly

�� Applications

Typical applications include:

• Industrial motor drives (~5.5 kW)
• UPS systems
• Solar / PV inverters
• Power converters

�� Suitable for inverter systems up to ~12 kVA.

�� Functional Description

The module operates as a complete power conversion unit:

1. AC input → rectifier → DC link
2. Brake chopper controls excess energy
3. IGBT inverter generates PWM-controlled AC output
4. Freewheeling diodes provide current paths
5. NTC sensor monitors temperature                                                                        

                                                  

📌 Overview

The FS300R12OE4 is a 1200 V, 300 A six‑pack IGBT power module in Infineon’s EconoPACK™ + D housing. It integrates multiple power semiconductor devices (IGBTs and diodes) suitable for three‑phase inverter topologies and high‑power applications requiring robust switching performance and high current handling.

🔧 Key Technical Specifications ➤ General Configuration

• Module Type: Six‑pack (three half‑bridge legs) IGBT configuration for 3‑phase converters.

• Voltage Rating: 1200 V maximum collector‑emitter voltage (V_CE).

• Current Rating: 300 A nominal continuous collector current.

• IGBT Technology: Trench/Fieldstop IGBT4 generation offering low conduction loss and good switching performance.

• Housing: EconoPACK™ + D with PressFIT terminations for reliable mechanical and electrical contact.

• Isolation: Isolated base plate for easy mounting on heatsinks and reduced EMI concerns.

⚙️ Electrical Characteristics

• Collector‑Emitter Saturation Voltage (V_CE(sat)): ~1.75 V (typical at 25 °C), indicating low on‑state losses.

• Diode Forward Voltage (V_F): ~1.65 V (typical at 25 °C) for internal fast recovery diodes.

• Operating Junction Temperature: Up to 150 °C maximum, allowing high thermal stress tolerance.

• Short‑Circuit Capability: High short‑circuit robustness with self‑limiting current behavior for safe operation under fault conditions.

• Surge Current Capability: Designed to withstand high transient current spikes.

🧠 Integrated Features

• NTC Temperature Sensor: For internal temperature monitoring and enhanced protection in power designs.

• High Mechanical Robustness: Durable construction to withstand vibration and thermal cycling.

• RoHS Compliant: Meets environmental standards.

• Ideal for Low‑Inductance Designs: Facilitates high‑speed inverter layouts and minimizes parasitic effects.

🛠️ Typical Applications

This module is extensively used in power electronics systems where reliable high‑power switching is required, such as:

• Photovoltaic inverters

• Uninterruptible Power Supplies (UPS)

• Industrial drives and motor control inverters

• High‑power converters

• Elevators and traction system

  📌 Mechanical & Packaging Notes

  • Dimensions: Roughly 162 mm × 150 mm footprint.

  • Connection Technology: PressFIT for gate, emitter and collector contacts, enabling robust assembly without soldering.

  • EconoPACK™ + D Form Factor: Standardized form factor for power modules, easing design‑in and heatsink compatibility.                                                                             

�� Overview

The SKM200GAH123DKL is a high‑power IGBT module designed for demanding industrial applications such as motor drives, power converters, welding inverters, and AC/DC chopper systems. It integrates one or more IGBTs with fast freewheeling diodes in a compact, rugged package optimized for high voltage and current switching.

⚙️ Electrical Ratings & Key Specifications

Voltage & Current

• �� Maximum Collector‑Emitter Voltage (V_CES): 1200 V

• �� Gate‑Emitter Voltage (V_GES): ± 20 V

• �� DC Collector Current:
  • 300 A at case tempe­rature 25 °C
  • 200 A at case tempe­rature 80 °C

• ⚡ Repetitive Peak Collector Current (I_CM): ~400 A (1 ms pulse)

• �� Typical Saturation Voltage (V_CE(sat)): ~1.8 V @ 200 A
  → Low V_CE(sat) means lower conduction losses and higher efficiency.

Switching Performance

• ⏱ Turn‑on Delay (t_d(on)): ~130 ns

• ⏱ Turn‑off Delay (t_d(off)): ~430 ns

• ↔️ Short‑Circuit Current Capability: Up to ~900 A (very short pulses)
  → These parameters characterize how fast and robust the device can switch high power loads.

��️ Thermal & Mechanical Characteristics

• �� Maximum Junction Temperature (T_j): 150 °C

• �� Power Dissipation (per IGBT): ~1040 W

• �� Thermal Resistance (R_thJC):
  • IGBT ≈ 0.12 K/W
  • Diode ≈ 0.25 K/W
  → Low thermal resistance helps transfer heat efficiently to an external heatsink for stable operation under load.

Package & Construction

• �� SEMITRANS® module with Direct Bonded Copper (DBC) insulated baseplate — enhances electrical isolation and thermal conductivity.

• The module has robust mechanical terminals for high‑current connections and stable mounting.

�� Internal Features

• Trench IGBT technology — offers low conduction loss and improved switching performance.

• Integrated fast freewheeling diodes — allow current to flow in reverse during off‑state, helping reduce voltage spikes and switching stress.

• Low‑inductance internal layout — minimizes switching losses and electrical noise.

��️ Typical Applications

The SKM200GAH123DKL is engineered for mid‑to‑high power industrial power electronics, including:
✔ AC/DC choppers and inverters
✔ Servo drives and motor control systems
✔ Welding and induction heating systems
✔ Renewable energy power converters & UPS systems
✔ Power supply units requiring robust high current switching                                                                                                    

1. General Description

The PM20CEA060 is an Intelligent Power Module (IPM) based on IGBT technology, used in power electronics for switching and motor control applications. It integrates IGBT power devices, free-wheel diodes, gate drive circuits, and protection functions inside a single compact module.

The module is typically designed for three-phase inverter output circuits and is widely used in motor drives, power supplies, and industrial automation systems.

2. Internal Structure

The PM20CEA060 contains several integrated components:

• IGBT switches (three-phase inverter configuration)

• Free-wheeling diodes

• Gate drive circuits

• Protection logic circuits

• Temperature sensing elements

3. Key Features

• Collector-Emitter Voltage: 600 V

• Collector Current: 20 A

• Integrated gate driver circuits

• Built-in protection functions

  • Short-circuit protection

  • Over-current protection

  • Over-temperature protection

  • Under-voltage protection

• High switching speed

• Low power loss and high efficiency

• Compact module design

4. Absolute Maximum Ratings 5. Electrical Characteristics 7. Mechanical Characteristics

• Module type: Intelligent Power Module (IPM)

• Compact isolated baseplate package

• Weight: approximately 60 g

• Mounting: screw mounting to heatsink

8. Operating Principle

1. A DC supply voltage is applied to the module.

2. Control signals are applied to the logic-level input pins.

3. The internal gate driver circuits switch the IGBTs ON and OFF.

4. The switching action converts DC power into three-phase AC output for driving motors.

5. The protection circuits monitor current, voltage, and temperature to protect the module from damage.

9. Typical Applications

The PM20CEA060 module is commonly used in:

• AC motor drives

• Servo control systems

• UPS systems

• Industrial inverters

• HVAC systems

• Pump and fan control systems

1. General Description

The PVC550A‑16 is a high‑power IGBT (Insulated Gate Bipolar Transistor) module designed for efficient power switching in demanding applications. It’s manufactured by NIEC and built to handle heavy loads in power conversion systems.

This module combines the fast switching and control features of IGBTs with integrated free‑wheel diodes in a compact, robust package. It’s optimized for high efficiency, high current capacity, and reliable operation in industrial environments.

2. Key Features & Advantages

• High Power Handling: Designed to manage large currents and voltages typical of industrial power systems.

• RoHS / Lead‑Free: The module is compliant with environmental safety standards.

• Compact, Rugged Package: Suitable for installation in power electronics assemblies where space and reliability matter.

• Enhanced Thermal Performance: The design promotes good heat dissipation under heavy load conditions.

• High Switching Speed: IGBTs used in the module support rapid PWM control.

• Flexible Integration: Compatible with common PWM gate drivers and heatsinks.

3. Typical Applications

This IGBT module is suited for use in systems that require efficient and reliable power switching, such as:

• Inverters and converters for industrial power supplies.

• Motor drives and variable frequency drives (VFDs).

• UPS (Uninterruptible Power Supply) systems.

• Renewable energy power electronics (e.g., solar and wind inverters).

• Industrial automation and control systems.

4. Operating Principle (How It Works)

An IGBT module like the PVC550A‑16 acts as a high‑power semiconductor switch:

1. When a control voltage is applied to the gate terminal, the IGBT conducts current between collector and emitter.

2. Removing the gate voltage turns the IGBT off, stopping current flow.

3. Integrated diodes provide a return path for current during inductive switching (such as in motor drives), which helps prevent voltage spikes and improves efficiency.

4. The module is typically used in PWM (Pulse Width Modulation) control schemes to convert DC power into controlled AC outputs or to switch DC loads efficiently.

5. Technical Highlights (Based on Industry Class)

Exact electrical ratings are typically defined in the official datasheet, but modules in the “550A‑16” class usually support:

• Collector‑Emitter Voltage: High voltage class (often ~1700 V or similar for this naming series)

• Collector Current: Around 550 A continuous handling capacity

• Gate‑Emitter Voltage: ±20 V typical for IGBT modules

• Form Factor: Standard industrial IGBT module package with screw‑on or plug‑in terminals

👉 For precise numbers (V_CES, I_C, thermal resistance, switching characteristics, pin layout, mechanical drawings, etc.), you should obtain the official datasheet PDF from the component distributor or manufacturer’s site.

6. Mechanical & Integration Notes

• Module Size & Pin Layout: Standardized to fit industrial power electronics assemblies.

• Heat Dissipation: Often mounted to a heatsink with thermal interface materials for efficient cooling.

• Integration: Works with typical PWM gate drivers and thermal protection systems in industrial converters.

Overview

The 6MBI180VX‑120‑55 is part of Fuji Electric’s V‑series (6th generation) six‑pack IGBT (Insulated‑Gate Bipolar Transistor) modules, designed to provide a compact, robust three‑phase inverter power stage. It integrates six IGBTs plus six anti‑parallel fast freewheeling diodes in a single package with low inductance and excellent thermal characteristics, simplifying the design of AC motor drives and industrial converters.

Typical applications include:

• Three‑phase inverter stages for AC motor drives, VFDs

• Servo and motion control systems

• Uninterruptible Power Supplies (UPS)

• Industrial converters and welding power supplies.

⚡ Electrical Ratings 🧱 Module Construction & Features

Integrated Six‑Pack Topology:

• Three half‑bridge legs (6 IGBTs + 6 freewheel diodes) — eliminates the need for discrete devices in a three‑phase inverter.

V‑Series Chip Technology:

• Uses refined trench gate and field‑stop IGBT chips that balance low conduction losses and reasonable switching losses for efficient PWM operation.

Compact, PCB‑Mount Package:

• M648 module footprint with solder or pin leads for direct PCB mounting.

Low Stray Inductance Layout:

• Internal power paths and device placement reduce parasitic inductance, improving switching performance and reducing EMI.

 

🚀 Key Technical Features

• High Voltage & Current Capability: Supports up to ~150 A continuous current at rated voltages.

• Full Bridge Integration: Six‑pack layout integrates full three‑phase inverter bridge.

• Industrial Grade Thermal Limits: Junction and case temperatures accommodate demanding duty cycles.

• Efficient Power Switching: V‑series IGBTs combine low V_CE(sat) and moderate switching losses.

• Robust Packaging: Designed for PCB mounting with stable mechanical and thermal performance.

📍 Typical Applications

The 6MBI180VX‑120‑55 is widely used in:

• Three‑phase AC motor drives and PWM inverters

• NC servo drives and motion controllers

• UPS and industrial power converters

• General industrial power electronics (e.g., welding machines)

1. General Overview

The PS12038 belongs to the Intellimod™ IPM series, which combines power devices and control circuitry into a compact module. It is mainly designed for three-phase inverter circuits used in motor control systems.

Basic characteristics

• Device type: Intelligent IGBT Power Module (IPM)

• Configuration: 3-phase inverter bridge

• Voltage rating: 1200 V

• Output current: 25 A

• Package: 24-pin Power DIP module

• Isolation voltage: ≈2500 V

The integration of multiple functions inside one module reduces circuit complexity and PCB size.

2. Internal Structure

The PS12038 integrates the following components inside a single module:

• 6 IGBT power transistors

• 6 free-wheel diodes

• Gate driver circuits (HVIC)

• Protection circuits

• Built-in thermistor for temperature sensing

Simplified internal configuration DC+
|
┌───────────────┐
│ 3-Phase IGBT │
│ Inverter │
│ Bridge │
└───────────────┘
| | |
U V W
(Motor Phase Outputs)
|
DC-

This configuration forms a complete three-phase inverter stage capable of driving AC motors.

3. Electrical Characteristics

These parameters determine the switching capability and operating limits of the module.

4. Protection and Control Features

A key advantage of the PS12038 IPM is its built-in protection system.

Integrated protection functions include:

• Over-current protection

• Short-circuit protection

• Under-voltage lockout

• Over-temperature monitoring

• Fault output signal (FO pin)

These features help prevent device damage and improve system reliability.

5. Mechanical Characteristics

Main mechanical details:

• Package type: Power DIP (transfer molded)

• Pin count: 24 pins

• Isolation voltage: ≈2500 V DC

• Compact integrated design for PCB mounting

 

6. Key Features

• Integrated 3-phase IGBT inverter

• Built-in gate driver ICs

• Internal protection circuits

• Thermistor for temperature monitoring

• Direct interface with DSP or microcontroller

• Compact single-package power solution

7. Typical Applications

The PS12038 module is commonly used in:

• AC motor drives

• Small industrial inverters

• Smart motor systems

• HVAC compressors

• Industrial automation equipment

📌 What It Is

The VUB145‑16xx series is a high‑voltage power semiconductor module based on IGBT (Insulated Gate Bipolar Transistor) and/or diode technology designed for use in power conversion and motor drive systems such as inverter bridges, rectifiers, brake units, and DC link applications. These modules are intended for industrial power electronics where rugged switching performance and high reliability are needed.

🧾 Key Technical Specifications 🔌 Internal Configuration & Functional Blocks

Module Family: VUB145‑16N01 / VUB145‑16NOXT
These modules typically feature two major semiconductor functional groups inside one package:

🔹 IGBT + Diode (Converter / Brake or Inverter)

• IGBT switches for high‑speed switching under load

• Freewheeling diodes for reverse current handling

• Often arranged for buck chopper / motor brake circuits or three‑phase inverter/rectifier bridge functions.

🔹 3‑Phase Bridge Topology (in some variants)

• A three‑phase diode bridge plus auxiliary brake or buck chopper path

• Integrated NTC thermistor for temperature sensing/monitoring

• Designed to simplify common motor drive front ends and DC link circuits.

🧠 Functional Overview

These modules are designed to handle high‑power switching tasks in industrial power electronics:

• Power Conversion: Switching DC to AC (inverter) or AC to DC (rectifier) power stages

• Motor Drives / VFDs: Building blocks in three‑phase motor controllers

• Braking Circuits: Provides chopper paths to dissipate regenerative energy

• DC Link / Buck Circuits: Suitable for intermediate power stage control between DC and AC systems

They support PWM (pulse‑width modulation) control strategies typical of modern power electronics.

📌 Typical Applications

• Industrial motor control and variable frequency drives (VFDs)

• Inverter power stages for renewable energy systems

• UPS and power supply front ends

• Brake and chopper circuits for heavy loads

• General power conversion and conditioning systems

We are the leading supplier of TDB6HK180N16RR_B11 IGBT MODULE made from high quality material at competitive prices.

Tdb6hk180n16rrb11 igbt module Infineon

1. General Overview

• Device Type: IGBT power module

• Manufacturer: Infineon Technologies

• Configuration: Dual IGBT (half-bridge) with free-wheel diodes

• Voltage Class: 1200 V

• Current Class: 50 A

• Package: Industrial insulated baseplate module (approx. 24-pin)

The module integrates two IGBTs and two fast free-wheel diodes, forming a half-bridge inverter structure commonly used in power electronics.

2. Electrical Characteristics

These ratings enable the module to operate in medium-to-high-power switching applications with good efficiency and reliability.

3. Internal Configuration

The BSM50GX120DN2 uses a half-bridge topology:

DC+
|
IGBT1
|
+------ Output
|
IGBT2
|
DC-

Each IGBT has an anti-parallel free-wheel diode that provides a current path during reverse conduction when switching inductive loads such as motors.

4. Switching Characteristics

Typical switching parameters (at IC ≈ 50 A):

These characteristics enable fast switching and reduced switching losses in PWM inverter circuits.

5. Thermal Characteristics

The module uses an insulated metal baseplate that allows efficient heat transfer to a heatsink.

6. Mechanical Features

• Insulated metal baseplate for thermal dissipation

• Compact rectangular power module (~122 mm × 62 mm)

• Screw mounting to heatsink

• Multiple power and gate pins for easy busbar connection

7. Key Features

• High 1200 V blocking voltage capability

• Fast free-wheel diodes integrated

• Low VCE(sat) for reduced conduction losses

• High switching speed for PWM inverters

• Integrated temperature monitoring (NTC) in some variants

• Low thermal resistance design for efficient cooling

8. Typical Applications

The BSM50GX120DN2 module is widely used in:

• Industrial motor drives / VFDs

• UPS systems

• Solar and wind power inverters

• Welding equipment

• Power converters and rectifiers

• Energy storage systems

 

1. General Overview

The FP15R12KE3 is a 1200 V, 15 A IGBT power module manufactured by Infineon Technologies. It belongs to the EconoPIM™ 2 (Power Integrated Module) family and integrates several power components into a single compact package.

This module typically contains IGBT inverter switches, rectifier diodes, and brake-chopper circuitry, allowing it to be used directly in three-phase motor drive and inverter systems. It uses IGBT3 (E3) trench technology, providing low switching losses and high reliability in industrial power electronics.

Electrical Specifications

These characteristics allow efficient switching of medium-power loads in industrial drives and converters.

Thermal Characteristics

The module includes a copper baseplate to improve heat spreading and allow effective cooling through a heat sink.

Internal Configuration

The EconoPIM™ 2 architecture integrates several power devices in one package:

• Three-phase diode rectifier

• Three-phase IGBT inverter

• Brake-chopper IGBT

• Free-wheel diodes

• Integrated NTC temperature sensor

This design reduces external components and simplifies inverter construction.

Key Features

• 1200 V voltage rating for industrial AC power systems

• 15 A current capability

• Low switching losses with trench IGBT technology

• Integrated rectifier, inverter, and brake chopper

• Low stray inductance design

• Copper baseplate for improved thermal performance

• Solder-pin terminals for easy PCB mounting

Mechanical Characteristics

This compact design allows integration into industrial motor control boards and compact inverter systems.

Typical Applications

The FP15R12KE3 module is widely used in:

• Industrial AC motor drives

• Variable Frequency Drives (VFD)

• Industrial inverters

• Servo drive systems

• UPS systems

• Small renewable energy converters

These applications benefit from the module’s integrated power stage and compact design. 

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 General Description

IFS100B12N3E4_B31 is a 1200 V, 100 A six-pack IGBT module from Infineon’s MIPAQ™ series. It integrates multiple IGBT switches and diodes in a compact, rugged package with built-in sensing for current and temperature, making it suitable for motor drives, inverters, and power converters.

�� Key Electrical Specifications �� Module Configuration & Packaging

• Configuration: Six-pack (three phase bridge with six IGBTs & freewheeling diodes)

• Housing: EconoPACK™ 3 compact module for easy system integration

• Dimensions: Approx. 122 × 62 mm footprint

• Shunts & Thermistor: Current sense shunts and NTC thermistor integrated for protection and feedback

�� Key Features

• High efficiency: Trench gate field-stop IGBT4 technology minimizes on-state and switching losses.

• Thermal robustness: Designed for excellent power cycling and thermal performance at high junction temperatures (up to 150 °C).

• Integrated sensing: Built-in current shunts and temperature sensing simplify system monitoring and control.

• Compact form factor: EconoPACK™ 3 housing supports high power density with reduced footprint.

• Industrial qualification: Suited for demanding industrial applications such as motor drives and power inverters.

�� Typical Applications

• Motor control drives (AC inverter drives)

• Industrial converters and power supplies

• Renewable energy inverters

• Servo drives and traction converters

The module’s robust design, integrated sensing elements, and power handling capability make it a widely used choice where efficient, reliable high-power switching is required.                                                                                                                                                                                                                    

📌 Technical Overview 🔌 General Description

This device is an IGBT power module, designed as a single‑switch unit combining a fast IGBT transistor with a freewheeling diode in a compact power module package. It’s built for high‑frequency switching, high current capacity, and industrial reliability.

• Technology: Fast IGBT2 chip technology (optimized for higher switching frequencies)

• Configuration: Single switch (IGBT + anti‑parallel diode)

• Package Size: 62 mm C‑Series module footprint

• RoHS compliant / Lead‑free

📈 Key Electrical Ratings 🧠 Electrical & Switching Characteristics

• Fast switching performance: Designed to support high‑frequency PWM/drive applications with reduced switching losses.

• High short‑circuit capability: Self‑limiting current tolerance improves robustness against short transients.

• Positive temperature coefficient of V₍CE(sat)₎: Helps with paralleling modules and reducing thermal runaway risk.

🔧 Thermal & Mechanical Features

• Copper base plate with isolated mounting: Enhances heat dissipation and allows easier heatsink integration.

• High creepage and clearance distances: Improves safety and insulation for high‑power circuits.

• CTI > 400: High resistance to tracking across the module surface.

• Thermal resistance (junction‑to‑case): ~0.05 K/W (indicative)

📦 Applications

This module is typically used in demanding industrial and power conversion environments, such as:

• Motor drives and servo control systems

• Industrial inverters and UPS systems

• Resonant converters and frequency converters

• Medical power supplies                                                                                                                                                                                                                                          

1. General Overview

The SKiM304GD12T4D is a 1200 V, 300 A power semiconductor module that integrates multiple IGBTs and free-wheel diodes in a single package. It uses Trench-Gate IGBT4 technology, providing low switching losses and efficient power conversion in high-power systems.

Main characteristics

• Device type: IGBT power module

• Configuration: Six-pack (three-phase inverter bridge)

• Rated voltage: 1200 V

• Nominal collector current: 300 A

• Max junction temperature: 150 °C

• Package: SKiM-4 housing

The six-pack structure allows the module to implement a complete three-phase inverter stage with only one module.

2. Electrical Characteristics

These parameters define the safe operating conditions of the module.

3. Internal Configuration

The module integrates:

• 6 IGBT switches

• 6 anti-parallel freewheel diodes

• NTC temperature sensor

Structure Phase U Phase V Phase W
┌─IGBT─┐ ┌─IGBT─┐ ┌─IGBT─┐
DC+ ───┤ ├─────┤ ├─────┤ ├──
└─────┘ └─────┘ └─────┘
┌─────┐ ┌─────┐ ┌─────┐
DC− ───┤ ├─────┤ ├─────┤ ├──
└─IGBT─┘ └─IGBT─┘ └─IGBT─┘

 

4. Mechanical and Thermal Design

Package: SKiM-4 housing
Dimensions: approx. 123 × 107 × 35 mm
Weight: about 0.31 kg

Key thermal features:

• DCB substrate (Al₂O₃ Direct Copper Bonded) for electrical isolation and heat spreading.

• Pressure contact technology for reliable heat transfer to the heatsink.

• Low-inductance housing to reduce voltage spikes during switching.

5. Key Technological Features 1. Trench-Gate IGBT4 Technology

Provides:

• Lower conduction losses

• Faster switching

• Higher efficiency

2. Pressure-Contact Thermal Interface

Eliminates solder fatigue between the module and heatsink, improving reliability during thermal cycling.

3. Spring-Contact Gate Terminals

Allows the driver PCB to connect without soldered wires, improving vibration resistance.

4. Integrated Temperature Sensor

Used for:

• Over-temperature protection

• Thermal monitoring of the module.

6. Typical Applications

The module is designed for high-reliability power electronics systems, including:

• Industrial AC motor drives / VFDs

• Wind turbine converters

• Automotive traction inverters

• UPS systems

• Solar and renewable energy inverters

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 General Overview

The 6MBI550V-120 series (e.g., -50 suffix variant) is a 1200 V, 550 A class IGBT module in Fuji Electric’s V-series power module family. It integrates multiple power semiconductor devices into a single rugged package designed for inverter and drive applications, offering high efficiency, robust thermal performance, and reliable switching operation.

⚡ Electrical Ratings & Features Voltage & Current Ratings

• Collector-Emitter Voltage (V_CES): 1200 V — capable of blocking high DC link voltages in industrial power converters.

• Nominal DC Collector Current (I_C): ~550 A — high continuous current capability suitable for heavy loads.

• Pulsed/Peak Current: Capability up to ≥1100 A (1 ms pulse) under specified conditions.

IGBT Characteristics

• Gate-Emitter Voltage (V_GE): ±20 V — standard control drive range.

• Collector-Emitter Saturation Voltage (V_CE(sat)): Typical ~2.5–2.9 V @ ~600 A (25 °C), rising with temperature.

• Zero Gate Voltage Collector Leakage: Small leakage current at high blocking voltage.

• Low Gate Leakage: Typical <0.6 µA, aiding predictable control behaviour.

🌡️ Thermal & Environmental Ratings

• Operating Junction Temperature (T_j): Up to ~150 °C under operating conditions.

• Maximum Junction Temperature: ~175 °C (device limit).

• Case Mount Temperature (T_C): Rated to ~125 °C.

• Storage Temperature: –40 °C to +125 °C.

• Isolation Voltage: Typically ~2.5 kV RMS between terminals and baseplate (1 min).

🚀 Key Technical Characteristics

Specifications are typical values and may vary slightly with exact part suffix or manufacturer batch.

📍 Typical Applications

The 6MBI550V-120 module is engineered for high-power industrial applications, including:

• Three-phase inverters and motor drives (AC motor control).

• Industrial power converters and welding machines.

• Uninterruptible Power Supplies (UPS) and high-capacity power supply systems.

• Renewable energy converters (solar/wind inverter stages).

The module’s high current transfer capability, robust voltage rating, and efficient switching behaviour make it suitable for continuous duty in demanding power electronics environments. 

General Overview

The 7MBR50VM120‑50 is a PIM (Power Integrated Module) from Fuji Electric’s V‑series designed to combine inverter, converter‑diode, and dynamic brake circuitry in a single encapsulated power stage. It integrates multiple IGBTs and diodes with a built‑in brake function, in a compact PCB‑mount package with solder pins for ease of integration.

Typical use cases include:

• Inverters for AC 3‑phase motor drives

• NC servos and motion control systems

• Uninterruptible power supplies (UPS)

• General industrial power electronics converters

⚡ Electrical Ratings & Core Specifications

Typical conduction parameters:

• Collector‑Emitter Saturation Voltage (V_CE(sat)): ~2.2 – 2.7 V at 50 A (typical values)

• Gate‑Emitter Threshold (V_GE(th)): ~6.0 – 7.0 V

🌡️ Thermal & Environmental Ratings

• Maximum Junction Temperature (T_j):

  • Inverter & Brake: up to 175 °C

  • Converter: up to 150 °C

• Operating Junction Temperature (under switching): –40 °C to +150 °C

• Case Temperature (T_C): Rated up to +125 °C

• Storage Temperature: –40 °C to +125 °C

🧱 Module Architecture & Features

• PIM Configuration: Integrates inverter bridge, brake chopper, and rectifier diode functions in a single compact module, reducing BOM and simplifying assembly.

• Low V_CE(sat) Technology: Efficient conduction with reduced on‑state voltage losses for improved system efficiency.

• Compact PCB Mount: Designed for mounting on printed circuit boards or heatsinks with solder pins.

• Robust Thermal Design: Capable of withstanding high junction temperatures typical of industrial PWM applications.

🚀 Typical Applications

This module is used in a broad range of medium‑power industrial power electronics where compact, efficient switching is essential:

• AC motor drives (three‑phase PWM inverters)

• NC and servo amplifiers

• UPS and power supply inverters

• Industrial converters and UPS systems

         

General Overview

• Type: Industrial IGBT power module (insulated baseplate)

• Rated Voltage: 1200 V collector‑emitter blocking capability (DC)

• Rated Collector Current: 400 A class

• Topology: 3‑Level “T‑Type” / 4‑in‑1 configuration (multiple switches and diodes in one module)

• Application Focus: Medium to large‑power motor drives, UPS inverters, renewable energy inverters, servo and motion control, industrial converters.

This module is built for compact, power‑dense three‑level topologies, which help reduce switching losses and improve system efficiency in large power stages.

⚡ Electrical Ratings

Key Electrical Specifications (typical/class values unless stated):

• Collector‑Emitter Voltage (V_CES): 1200 V DC — high DC link support.

• DC Collector Current (I_C): 400 A — continuous current capability at rated case temperature.

• Gate‑Emitter Voltage (V_GE): ±20 V control range — standard driving requirements.

• Configuration: 4‑device combination suitable for three‑level inverter legs — often includes both “bridge” and “AC switch” sections in one module.

• Junction Temperature (T_j max): ~175 °C rated — robust for industrial duty cycles.

• Isolation Voltage (Viso): Typically ~4000 V RMS between baseplate and terminals, enabling safe mounting on heatsinks.

Power Handling & Losses

• Power Dissipation (P_C): ~2300–2400 W (module level, depends on case temperature and operating conditions).

🌡️ Thermal & Package Characteristics

• Package: High‑power insulated baseplate module with robust terminals and copper base for effective heat removal.

• Thermal Resistance (typical):

  • Diode (R_th(j‑c)): ~0.105 °C/W (bridge)

  • Separate AC switch section: Ranging ~0.106–0.165 °C/W for IGBT/diode paths.

• Operating Environment: –40 °C to +150 °C junction range with appropriate cooling.

🔋 Construction & Features

Elementary Device Design

• IGBT Technology: Carrier‑Stored Trench Gate (CSTBT) or similar Mitsubishi field‑stop / trench approach for efficient switching and low on‑state losses.

• 3‑Level T‑Type Module: Designed to integrate multiple switching elements with minimized internal stray inductance — a key consideration for high‑frequency PWM and 3‑level operation.

• Freewheeling Diodes: Integrated fast recovery diodes paired with IGBTs for bidirectional current paths in inverter legs.

• Low Inductance Layout: Reduces switching stress and electromagnetic interference (EMI).

📍 Typical Applications

The CM400ST‑24S1 module’s characteristics make it suitable for high‑power industrial systems such as:

• Three‑level AC motor drives and power inverters.

• Renewable energy inverters (PV, wind systems).

• Uninterruptible Power Supplies (UPS) and static converters.

• Servo / motion control systems requiring reliable high‑power switching.

 

General Overview

The VUB145‑16NOXT from Littelfuse / IXYS is a three‑phase bridge rectifier with brake unit and IGBT/diode combination module designed for heavy‑duty power conversion tasks — typically used in motor drives, power supplies, inverter systems, and industrial automation. It is housed in an E2 pack with DCB (Direct Copper Bond) baseplate for robust thermal and electrical performance.

Unlike discrete IGBT modules that just switch current, this part integrates a three‑phase rectifier bridge plus braking circuitry optimized for drive applications, combining bidirectional control elements and fast recovery diodes.

⚡ Key Electrical Characteristics Voltage & Current Ratings

• Peak Repetitive Reverse Voltage (V_RRM): 1600 V — high blocking capability in rectifier and brake circuits.

• Collector‑Emitter Voltage (V_CES): 1200 V — suitable for typical industrial DC link voltages.

• Average Continuous Current: 150 A — typical forward rectified current rating.

• Collector (or Effective Load) Current @ 80 °C: ~140 A.

• Freewheeling Diode Forward Voltage (V_F): ~1.68 V at rated current.

• Forward Surge Current: ~1100 A (peak) — supports transient high load conditions.

• Rate of Rise of Current (di/dt): ~1000 A/µs — indicates dynamic capability.

🔌 Device Functionality & Topology

• Topology: Three‑phase bridge rectifier with brake unit — integrates IGBT(s) with freewheeling/rectifier diodes.

• NTC Thermistor: Integrated for temperature monitoring and protection in drive circuits.

• Package Type: E2 Pack (PCB mount with lead terminals) — compact and rugged industrial format.

🌡️ Thermal & Environmental Specifications

• Maximum Junction Temperature (T_j): ~150 °C — typical limit for heavy industrial duty.

• Case Temperature Rating: ~105 °C rated under load conditions.

• Thermal Resistance (R_th(j‑c)): ~0.5 K/W (junction to case).

• Operating Ambient Range: –40 °C to ~150 °C (junction).

• Isolation Voltage: Typically ~3600 V AC (module to heatsink).

🧱 Construction & Features

• Chip Technology: X2PT (2nd‑generation Xtreme Light Punch Through) — rugged switching and low on‑state voltage drop.

• DCB Baseplate: Direct Copper Bond improves thermal cycling, heat conduction, and mechanical strength.

• Thin Wafer & Planar Passivated Chips: Ensure reduced forward voltage and improved power cycling.

• Short‑Circuit Withstand: Designed for brief (~10 µs) short‑circuit pulses without catastrophic failure.

📍 Typical Applications

This module is tailored for industrial power electronics applications requiring robust three‑phase AC‑to‑DC conversion and braking support:

• Motor drives and variable frequency drives (VFDs) — rectifier + brake section in drive front ends.

• Industrial inverters and converters — DC link rectification with braking control.

• Renewable energy power stages — grid‑tie and storage inverter front ends.

• Power supplies — high‑power rectification and dynamic braking circuits.

 General Overview

The GD100FFY120C6S (often sold under the GD100PIY120C6SN identifier) is a 1200 V insulated‑gate bipolar transistor (IGBT) module configured as a three‑phase inverter bridge. It uses advanced trench field‑stop (FS) IGBT technology for low conduction loss, rugged performance, and good thermal stability. The module integrates multiple IGBTs with anti‑parallel freewheeling diodes in a compact power package suitable for industrial drives, UPS systems, converters, and general power electronics.

⚡ Electrical & Semiconductor Ratings IGBT (Switch) Characteristics

• Collector‑Emitter Voltage (V_CES): 1200 V DC — high blocking voltage for industrial DC link levels.

• Gate‑Emitter Voltage (V_GE): ±20 V — standard drive range.

• Continuous Collector Current (I_C): ~155 A @ T_C=25 °C, derated to ~100 A @ T_C=100 °C.

• Pulsed Collector Current (I_CM): ~200 A for 1 ms pulses — allows transient overload.

• Maximum Power Dissipation (P_D): ~511 W @ T_j=175 °C — total chip power limit.

Diode (Freewheeling) Characteristics

• Repetitive Peak Reverse Voltage (V_RRM): 1200 V — matches IGBT voltage rating.

• Continuous Forward Diode Current: ~100 A — supports bidirectional currents in inverter legs.

• Diode Peak Forward Current (I_FM): ~200 A (1 ms).

🧱 Construction & Features

• Topology: Three‑phase bridge (six‑pack) — three half‑bridge legs with integrated IGBTs and diodes in one module for inverter operation.

• IGBT Tech: Advanced Trench Field‑Stop — low on‑state saturation and improved switching efficiency.

• Diodes: Fast and soft recovery anti‑parallel freewheeling diodes included for AC applications.

• Short‑Circuit Capability: Typically designed to withstand ~10 µs short‑circuit conditions — common in trench IGBT modules.

• Package: C6 press‑fit PCB or screw mount with isolated baseplate and low inductance layout for reduced switching stress.

• NTC Thermistor (optional): Often included for internal temperature sensing in control/ protection systems.

🚀 Key Technical Advantages

• High voltage and current handling — suitable for 1200 V DC link and ~100 A class loads.

• Integrated six‑pack bridge — simplifies three‑phase inverter implementation.

• Low conduction loss and rugged switching — trench FS technology helps reduce losses and improve efficiency.

• Robust thermal performance — high junction temperature and isolated baseplate improve reliability.

📍 Typical Applications

This module is commonly used in:

• Three‑phase PWM inverters and AC motor drives

• Servo drives and motion control systems

• Uninterruptible Power Supplies (UPS)

• General industrial power electronics and converters

• Renewable energy inverters and power conditioning systems. 

1. General Overview

• Device Type: IGBT Power Module (PIM – Power Integrated Module)

• Manufacturer: Infineon Technologies

• Technology: Trench/Field-Stop IGBT4 with Emitter Controlled Diode

• Package Type: EconoPIM™2 (Econo 2 housing)

• Configuration: Three-phase inverter with rectifier and brake chopper

The module integrates several power components into one compact unit, reducing system size and simplifying circuit design.

2. Key Electrical Specifications

These ratings allow the module to handle medium-power switching applications with high reliability.

3. Internal Circuit Configuration

The module integrates several power devices:

• Three-phase inverter (6 IGBTs)

• Free-wheel diodes

• Three-phase rectifier bridge

• Brake chopper IGBT

• NTC temperature sensor

This integrated configuration allows the module to perform AC-DC rectification and DC-AC inversion within the same package.

4. Main Features

• Trench/Field-Stop IGBT4 technology

• Low switching and conduction losses

• High power density

• Low stray inductance module design

• Copper baseplate for better heat dissipation

• Integrated temperature sensing (NTC)

• RoHS-compliant design

These features improve system efficiency and reliability in industrial power electronics systems.

5. Mechanical Characteristics

The copper baseplate helps spread heat effectively to the cooling system.

6. Typical Applications

The FP50R12KT4 module is commonly used in:

• Industrial motor drives

• HVAC systems

• Air-conditioning compressors

• Wind power converters

• Industrial inverters

• Welding and heating equipment

These systems require efficient switching of high voltage and current.

7. Working Principle

1. A gate voltage (~15 V) is applied to the IGBT.

2. The IGBT switches ON, allowing current flow between collector and emitter.

3. Removing the gate signal turns the device OFF.

4. Free-wheel diodes handle reverse current during switching.

5. The integrated rectifier and inverter stages allow conversion between AC and DC power.

1. General Overview

The module is designed for high-power switching applications such as industrial drives and power converters.

2. Key Electrical Specifications

These ratings allow the module to operate in medium- to high-power industrial inverter systems.

3. Internal Circuit Configuration Integrated Devices

The module typically integrates:

• IGBT power transistors

• Fast recovery free-wheel diodes

• Internal bus connections

• Thermal baseplate

Topology

Many Fuji 150 A modules are designed as a three-phase inverter (6-pack) structure.

Phase U : Upper IGBT + Diode
Lower IGBT + Diode

Phase V : Upper IGBT + Diode
Lower IGBT + Diode

Phase W : Upper IGBT + Diode
Lower IGBT + Diode

This configuration forms a complete three-phase inverter bridge used in motor drive systems.

4. Main Features

Key features of the module include:

• High current capability (150 A)

• 600 V voltage class

• Integrated free-wheel diodes

• Low conduction and switching losses

• Compact power module package

• High thermal efficiency

• High reliability for industrial use

These characteristics improve system efficiency and simplify inverter design.

5. Mechanical Characteristics

The isolated baseplate allows the module to be mounted directly onto a heat sink for effective thermal dissipation.

6. Typical Applications

The 6MBP150VCC-060 module is widely used in:

• Industrial motor drives

• Variable Frequency Drives (VFD)

• Uninterruptible Power Supply (UPS)

• Servo drive systems

• Welding machines

• Industrial automation equipment

These applications require efficient high-current switching and reliable power control.                                                                            

1. General Overview

The 7MBR150VN‑120 is a high‑power Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fuji Electric. It belongs to the Fuji V‑series of IGBT modules in a PIM (Power Integrated Module) configuration suitable for industrial inverter and power electronics applications.

• Device Type: IGBT Power Module (PIM)

• Manufacturer: Fuji Electric

• Model: 7MBR150VN‑120

• Voltage Class: 1200 V

• Current Rating: 150 A (continuous)

• Cooling: Heat‑sink / chassis mounting

• Package: M720 dual‑in‑line power module format

2. Key Electrical Specifications 4. Main Features

Key module features include:

• 1200 V voltage class with high blocking capability

• 150 A continuous current handling

• Integrated free‑wheel diodes for robust inductive load switching

• Compact PIM package (M720) with PCB or heat‑sink mount option

• Low VCE(sat) and switching losses for high efficiency

• High junction temperature capability (175 °C)

• High isolation between terminals and baseplate (2500 VAC)

5. Thermal Characteristics

Good thermal performance is key to reliable operation:

• High maximum junction temperature: up to 175 °C

• Low thermal resistance paths from the semiconductor to the baseplate

• Isolated baseplate allows mounting on a common heat sink with minimal insulation overhead.

This enables efficient heat removal in high‑load and high‑duty cycle applications.

6. Mechanical Characteristics

The isolated baseplate allows safe mounting onto grounded heatsinks while maintaining electrical isolation.

7. Typical Applications

The 7MBR150VN‑120 is commonly used in:

• Three‑phase AC motor drives

• Variable frequency drives (VFD)

• Uninterruptible Power Supplies (UPS)

• Servo amplifiers

• Industrial power converters

• Renewable energy inverter

1. General Overview

The 2MBI400U4H‑120 is a high‑power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. It belongs to the U4H high‑speed series of IGBT modules optimized for high‑frequency switching and low loss in demanding industrial power systems.

• Device Type: IGBT Power Module

• Manufacturer: Fuji Electric

• Model: 2MBI400U4H‑120

• Voltage Class: 1200 V

• Current Rating: 400 A (continuous)

• Configuration: Dual IGBT / Half‑bridge module

• Cooling: Heat‑sink / chassis mounting

• Technology: Trench‑gate IGBT for high‑speed switching

2. Key Electrical Specifications

Features

• High Voltage Capability: 1200 V blocking rating for 380–480 V AC line systems.

• High Current Capacity: 400 A continuous current rating for heavy‑load applications.

• Low Conduction Loss: Typical VCE(sat) around 2.1 V reduces power dissipation during ON state.

• Optimized Switching: Low switching energy (Eoff) and fast transitions support higher PWM frequencies.

• High Thermal Performance: Low junction‑to‑case thermal resistance helps remove heat efficiently.

• Robust Design: High isolation and wide operating temperature range enhance reliability.

5. Thermal and Mechanical Characteristics

• Thermal Resistance (IGBT): ≈ 0.08 °C/W

• Thermal Resistance (Diode): ≈ 0.13 °C/W

• Isolated Baseplate: Allows direct mounting on heat sinks without external insulating pads.

• Mounting: Typically uses M5/M6 hardware for secure heat sink attachment.

• Package Size: Standard half‑bridge module form factor (~108 × 62 × 30 mm typical).

6. Typical Applications

The 2MBI400U4H‑120 is widely used in high‑power electronics, including:

• Three‑phase motor drives and variable frequency drives (VFD)

• Industrial inverters for large machines and robotics

• Welding power supplies

• UPS (Uninterruptible Power Systems)

• Renewable energy converters (solar, wind)

• Power supplies and industrial automation systems

These applications benefit from the module’s balance of high current, voltage rating, and switching efficiency.