Sanghvi Electronics

The PD100KN16 is a power diode module designed for high‑current, high‑voltage rectification in industrial power electronics. It integrates a pair of series‑connected silicon rectifier diodes into a single chassis‑mountable module, providing a robust solution for AC‑to‑DC conversion stages in power systems.

• Device Type: Dual SCR (Silicon Controlled Rectifier) power module
• Configuration: Two SCRs in a half‑bridge (thyristor‑thyristor) arrangement
• Manufacturer / Family: Originally by IXYS (now Littelfuse)
• Package: WC‑501 / W74 chassis mount module
• Technology: Pressure‑contact SCRs with isolated baseplate

Triggering & Control

• Gate Trigger Voltage (VGT): ~2.5 V
• Gate Trigger Current (IGT): ~250 mA

Conduction Voltage

• On‑State Threshold Voltage (VT0): ~0.770 V
• Thyristors remain ON once gated until current falls below holding level (zero crossing).

Thermal Characteristics

• Thermal Resistance (junction‑to‑case): ~0.062 K/W per device
• Case‑to‑Heatsink Thermal Resistance: ~0.02 K/W
• Operating Temperature Range: ~‑40 °C to +125 °C

Good thermal performance facilitates heavy‑load duty and high power cycling when mounted to an appropriate heatsink.

Internal Configuration

• Dual Thyristors (SCRs): Two SCR devices configurable in a half‑bridge topology.
• Isolated Baseplate: Electrically isolated copper base for secure heatsink mounting.
• SCRs are controlled via individual gate and cathode terminals, allowing phase control of AC current.

Mechanical & Packaging Features

• Module Size: Approximately 149 × 60 × 52 mm (W74 / WC‑501 package)
• Mounting: Chassis mount with bolt terminals for power connections
• Weight: ~1.5 kg
• Baseplate: Electrically isolated for heatsink attachment

The robust package is suitable for industrial power applications requiring reliable high‑current switching.

Functional Behavior How It Works

• Thyristor (SCR) operation:
  • Turn‑on: By gating when forward voltage and gate current are applied.
  • Turn‑off: Only occurs once the current falls below the holding level (e.g., at AC zero crossing).
  • Cannot be actively switched off by the gate like an IGBT module.