Sanghvi Electronics

SKKQ1200/14E SEMIKRON SOFT STARTER
SKKQ800/14E SEMIKRON SOFT STARTER
SKKQ3000/14E SEMIKRON SOFT STARTER
SKKQ1500/14E SEMIKRON SOFT STARTER
SKKQ2000/14E SEMIKRON SOFT STARTER

Technical Description

⚠️ Important: Despite the name—including “SEMIX” and being listed among IGBT products, this part is not an IGBT switching module in the conventional sense. It is a power diode bridge rectifier module (uncontrolled full‑wave bridge) intended for AC → DC conversion in high‑power systems. This distinction is confirmed from official listings and datasheet excerpts.

📌 Description

The SEMiX291D16S is a high‑power bridge rectifier module in a SEMiX® 13 housing designed for heavy industrial power conversion applications. It integrates multiple high‑current power diodes on an isolated substrate to form a three‑phase full‑wave rectifier.

⚡ Electrical Specifications 🧩 Module Construction and Features

• Topology: Three‑phase full‑wave bridge rectifier (six diode bridge).
• Internal Structure: Power diodes directly soldered onto an isolated ceramic substrate for good thermal performance and electrical isolation.
• Housing: SEMiX 13 industrial power module.
• Terminal Height: ~17 mm for screw or press‑fit mounting.
• UL Recognition: UL file no. E63532.

🌡️ Thermal & Mechanical

• Package Dimensions: Approx. 138 × 71 × 17 mm (L×W×H).
• Weight: ~0.29 kg.
• Mounting: Screw mounting to heatsink recommended for high‑power operation.
• Baseplate: Electrically isolated for safe high‑voltage use.

🏭 Typical Applications

This rectifier module is used in industrial power conversion systems, including:

• Input bridge for AC/DC drives and motor control systems
• High‑power rectifiers in power supplies
• DC link generation for inverter stages
• UPS systems, welding equipment, and renewable energy converters (general use case for similar modules) 

�� Part Overview

• Part number: MDNA360UB2200PTED
• Manufacturer: IXYS (now part of Littelfuse)
• Product type: Three‑phase bridge rectifier with brake unit and NTC temperature sensing in an E2 package

Contrary to some catalog classifications, this module is not a conventional IGBT inverter module (i.e., it does not contain a main switching IGBT bridge for inverter output). Instead, it combines a three‑phase AC rectifier bridge with an integrated brake element and thermistor for high‑power industrial DC‑link applications.

�� Functional Blocks

The MDNA360UB2200PTED integrates:

1. Three–phase bridge rectifier (six power diodes) – converts 3‑phase AC to DC.
2. Brake chopper / brake unit – used for dynamic braking energy management in motor control systems.
3. NTC temperature sensor – for thermal feedback/monitoring.
4. E2‑Pack module – DCB (Direct Copper Bonded) base for mechanical and thermal robustness.

⚡ Key Electrical Ratings Rectifier (Diode Bridge) General �� Package and Construction

• E2 package with press‑fit or screw mount terminals for PCB / heatsink connection.
• DCB ceramic substrate providing electrical isolation and good heat conduction.
• Designed for robust high‑power industrial environments, such as drives and rectifier front‑ends.

�� Typical Features

• Three‑phase AC to DC rectification with braking capabilities.
• Integrated brake unit suited for motor control DC‑link energy management.
• Built‑in NTC temperature sensing for thermal monitoring.
• High current (~360 A) and high voltage (~2200 V) capacity for heavy‑duty power conversion.

�� Applications

This module is commonly used in:

• Industrial motor drive rectifier stages
• DC power supplies with braking loads
• UPS systems and traction electronics
• Heavy‑duty rectifier bridges with brake energy handling

It sits ahead of inverter switching stages (where discrete IGBTs or inverter modules are inserted) and handles the AC to DC conversion with braking control.

📌 General Overview

The SKIIP20NAB12T45 is a MiniSKiiP® power IGBT module from Semikron Danfoss, designed as a fully integrated intelligent power module (IPM) for industrial AC–DC–AC conversion systems. It combines power semiconductors and auxiliary components into a compact unit to simplify drive designs for motor control, inverters, UPS, and renewable energy systems.

• Series: MiniSKiiP®
• Type: CIB (Converter–Inverter–Brake) IGBT Module
• Voltage class: ~1200 V
• Current class: ~20 A nominal (typical)

⚙️ Electrical Characteristics 🔹 Power Stage Ratings

• Collector–Emitter Voltage (VCES): ~1200 V (module voltage class)
• Nominal Collector Current (IC): ~20 A (approximate, per datasheet class)
• Gate–Emitter Voltage (VGES): ±20 V typical for gate drive
• Topology: 3‑phase Converter + Inverter + Brake integrated system

👉 These ratings position the module for medium‑power industrial drives and inverters.

🧩 Internal Integrated Power Sections

The module integrates several key power blocks:

🅰 Rectifier Section (Converter)

• 3‑phase diode bridge
• Converts AC mains → DC link

🅱 Brake Chopper

• Clamps or dissipates regenerative energy
• Protects DC bus from overvoltage

🅲 Inverter Section

• 3‑phase bridge with IGBTs and freewheeling diodes
• Converts DC link → PWM‑controlled AC output

🅳 Auxiliary Components

• Temperature sensor (NTC) for thermal feedback
• Internal gate driver and protection elements typical of MiniSKiiP modules

⚡ Semiconductor Technology & Features

• IGBT switching devices: High‑efficiency power transistors for PWM conversion
• Freewheeling diodes: Anti‑parallel to IGBTs to carry reverse currents during switching
• Integrated brake chopper: Supports dynamic braking and regeneration control
• Compact, solder‑free pressure contacts: Improves reliability compared with soldered modules (standard MiniSKiiP build)

🌡️ Thermal Management & Protection

• Temperature sensing (NTC): Allows control system monitoring and overtemperature protection
• Efficient heat dissipation design: Minimizes thermal resistance and supports stable operation under load
• Typical MiniSKiiP packaging improves thermal coupling to a heatsink (direct attach)

🏗️ Mechanical & Packaging

• Package: MiniSKiiP® (compact integrated module)
• Mounting: Screw‑mount to heatsink
• Electrical connections: Spring contact and press‑fit for power and auxiliary pins
• Size: ~62 mm × 132 mm × 26 mm (module body)

🔋 Typical Applications

The SKIIP20NAB12T45 is suited for:

• Industrial three‑phase motor drives
• Variable Frequency Drives (VFDs)
• AC power inverters
• Renewable energy power stages
• Uninterruptible Power Supplies (UPS)
• General medium‑power power conversion systems                                                

🧠 Overview – SKIIP31NAB065T12 IGBT Power Module

Part Number: SKIIP31NAB065T12
Manufacturer: SEMIKRON
Device Type: IGBT Power Module (Insulated Gate Bipolar Transistor module)
Series: SKiiP 31 (MiniSKiiP family; medium‑power semiconductor power module)
RoHS Compliance: Lead‑free and RoHS compliant (environmentally compliant)
General Use: Medium‑power AC/DC and DC/AC power conversion and control systems.

🔌 Key Functional Description What It Is

The SKIIP31NAB065T12 is a power switching module that contains one or more IGBT semiconductor switches and often integrated free‑wheeling diodes or rectifier components packaged together in a compact module. It uses advanced semiconductor fabrication to offer efficient high‑voltage switching with high current capability, making it suitable for demanding industrial applications.

Core Function

• Solid‑state power switching: Acts as a controllable high‑power switch in power electronic converters.
• IGBT Technology: Combines MOSFET‑like gate control with bipolar transistor current capability — enabling high voltage and current handling with relatively fast switching and low conduction loss.
• Thermal Management: Designed for efficient heat dissipation through a heat‑sink mounting surface, critical for high‑power operation.

📊 Typical Electrical/Performance Attributes ⚡ Typical Features

• Low conduction and switching losses: Enables improved system efficiency.
• Fast switching capability: Useful in PWM inverters and motor drive applications.
• Robust thermal behaviour: Module casing and internal design facilitate efficient heat dissipation.
• RoHS compliant: Meets modern environmental standards for electronic products.

🏭 Typical Applications

This type of IGBT module is commonly used in medium‑power and industrial power electronics systems such as:

• Three‑phase motor drives and industrial inverters
• Solar and renewable energy inverters
• Uninterruptible Power Supply (UPS) systems
• Servo drives and industrial automation power electronics
• Power converters / rectifier stages in AC/DC and DC/AC conversion

📦 Mechanical & Integration Considerations

• Mounting: Module surface intended for heatsink mounting; requires thermal interface material for heat transfer.
• Terminal structure: Designed to integrate into power buses using bolted or press‑fit connectors.
• Protection & reliability: High ruggedness against electrical and thermal stress typically required in industrial environments.

1. General Overview

• Type: SKIIP83AHB15T1 is a full-bridge IGBT module.

• Manufacturer: Semikron

• Technology: IGBT + Diode (in a module package)

• Application: Power conversion, motor drives, inverters, welding, UPS, traction, and industrial converters.

The module contains IGBTs and freewheeling diodes arranged in a bridge configuration, which allows AC-DC or DC-AC conversion in a compact, high-power package.

2. Electrical Characteristics

• Collector-Emitter Voltage (V_CE): 1200 V (common for SKIIP83 series)

• Collector Current (I_C): 83 A nominal (continuous), 130 A pulsed (short-duration)

• Diode Reverse Voltage: Matches the IGBT rating (~1200 V)

• Gate Threshold Voltage (V_GE(th)): Typically 5 V

• Switching Frequency: Suitable for medium to high frequency PWM applications

Key features:

• Low conduction and switching losses

• High short-circuit ruggedness

• Integrated fast-recovery diodes for freewheeling

3. Thermal Characteristics

• Module Case Temperature (T_C): –40°C to +125°C (operating range)

• Junction Temperature (T_J): Up to 150°C

• Thermal Resistance (R_thJC): Typically ~0.25 K/W for each IGBT

Thermal management is crucial: the module usually requires a heatsink and sometimes forced air or liquid cooling for high-power operation.

4. Mechanical Features

• Package: Press-fit or bolted module with ceramic baseplate

• Size: Roughly ~80 × 140 × 25 mm (check datasheet for exact)

• Terminal Type: Screw or pressure contacts for DC and AC terminals

Designed for robust industrial environments, including vibration and thermal cycling.

5. Bridge Configuration

• Full Bridge: 4 IGBTs + 4 Diodes internally connected

• Function: Can implement H-bridge for motor drives or single-phase inverter

• Gate Control: Each IGBT gate must be driven by an isolated gate driver circuit

• Protection: Module supports short-circuit detection, often via external circuits

6. Advantages

• High current and voltage handling

• Compact for high-power applications

• Integrated diodes reduce component count

• Rugged industrial reliability                                                                                                                                                                                                                              

1. General Overview

• SKDH146/16-L100 is a power integrated module (PIM) manufactured by Semikron.

• It combines:

  • Three-phase diode bridge rectifier

  • IGBT braking chopper

  • Freewheeling diode

  • Temperature sensor (NTC)

2. Module Topology a) Rectifier Section

• 6 diodes forming a three-phase full bridge rectifier

• Converts AC input → DC output

b) Braking Chopper Section

• 1 IGBT + freewheeling diode

• Used to:

  • Dissipate excess energy during braking

  • Control DC bus voltage in drives

3. Key Features

• Integrated rectifier + IGBT chopper

• High voltage capability: 1600 V

• High current capability: ~140–146 A class

• Compact SEMIPONT™ housing

• Built-in NTC temperature sensor

• High surge current capability

• DCB (Direct Copper Bonded) substrate

  • Excellent thermal conductivity

  • High electrical isolation

👉 Reduces:

• External components

• Wiring complexity

• System size

4. Electrical Characteristics Rectifier Section

• Repetitive peak reverse voltage (V_RRM): 1600 V

• Average forward current (I_F / I_D): ~140 A

• Surge current (I_FSM): ~1250 A (10 ms)

IGBT Chopper Section

• Collector-Emitter Voltage (V_CES): ~1200 V

• Collector Current (I_C): ~75 A (typical chopper rating)

• Integrated freewheeling diode for current circulation

General Characteristics

• Isolation voltage: ~3000–3600 V RMS

• Low forward voltage drop

• Low leakage current

• High reliability under transient conditions

5. Thermal Characteristics

• Max junction temperature (Tj): up to 150 °C

• Thermal resistance (Rth): low due to DCB substrate

• Designed for:

  • Efficient heat dissipation

  • High power cycling capability

6. Mechanical Details

• Package: SEMIPONT™ (compact industrial module)

• Dimensions: approx. 100 × 45 × 20 mm

• Mounting: screw mounting on heatsink

• Connections: screw terminals / fast connectors

• Baseplate: electrically isolated

7. Functional Operation

1. 3-phase AC input applied to rectifier terminals

2. Diode bridge converts AC → DC

3. DC link feeds inverter/load

4. During braking:

   • IGBT chopper activates

   • Energy dissipated through braking resistor

8. Applications

• Variable Frequency Drives (VFDs)

• Industrial motor drives

• UPS systems

• Battery chargers

• DC motor control systems

• Industrial power supplies

📌 Module Overview

• Part Number: PM150RLA120 (same family as PM150CL1A120 — similar configuration and ratings)
• Manufacturer: Mitsubishi Electric / Powerex‑style Intelligent Power Module (IPM) design
• Module Type: Three‑phase IGBT power module with integrated drive and protection logic (Intelligent Power Module)
• Voltage Rating: 1200 V (collector‑emitter)
• Current Rating: 150 A continuous per phase
• Isolation Rating: ~2500 VDC isolation between power section and baseplate
• Package: Flat‑base insulated power module (screw/chassis mount)
• Thermal Junction Range: –20 °C to +150 °C

This module is part of Mitsubishi’s Intelligent Power Module (IPM) series — combining multiple IGBT switches, anti‑parallel diodes, and protection circuitry in a single module.

🧠 Internal Configuration

The PM150RLA120 contains:

• Three half‑bridge IGBT pairs (six IGBTs total) — forming a three‑phase inverter output stage.
• Anti‑parallel freewheeling diodes across each IGBT for current recirculation during switching.
• Regenerative brake IGBT section (75 A rated) — often used for dynamic braking/regeneration in motor systems.
• Monolithic gate drive and logic circuits built into the module to simplify external gate drive requirements.
• Protection functions including:
  • Short‑circuit protection with integrated detection.
  • Over‑temperature protection via internal sensing.
  • Under‑voltage lockout to prevent improper operation.
  • Fault output pin(s) for interfacing with external controllers.

⚡ Electrical Ratings Main Inverter (IGBT Section) Brake / Auxiliary IGBT Power Supply & Logic

• Control supply voltage (Vcc): ~15 V recommended for proper internal driver operation.
• Input logic thresholds: Designed for standard PWM input signals.

🛡️ Protection & Monitoring

This intelligent module includes built‑in diagnostics and protection circuits:

• Short‑Circuit Detection & Shutdown: Protects the module if output shorts occur.
• Over‑Temperature Protection: Monitors junction temperature and shuts down if it exceeds safe limits.
• Under‑Voltage Lockout: Prevents improper gate drive if supply voltage is too low.
• Fault Output (Fo): Signal output indicating protection activation or fault state to a controller.

📦 Typical Uses / Applications

• Three‑phase PWM motor drives (industrial AC motor control).
• Servo systems and automation drives.
• Inverters for variable frequency drives (VFDs).
• Renewable energy power conversion (solar/wind inverters).
• Elevator and traction systems requiring robust and compact inverter modules.

🧠 1. General Overview

• Manufacturer: Mitsubishi Electric

• Module Type: Intelligent Power Module (IPM)

• Series: G1 Series, C‑package screw‑mount IPM

• Topology: Inverter + brake (7‑pack IPM)

⚡ 2. Electrical Characteristics 🧩 3. Internal Configuration

The PM200RG1C120 adopts a “7‑pack” topology:

✔ Inverter Bridge (6 switches)

• 6 IGBTs configured as a three‑phase H‑bridge (U, V, W).

• Each IGBT has an anti‑parallel free‑wheeling diode to handle inductive load current.

✔ Integrated Gate/Protection Logic

• Built‑in drive circuits eliminate need for external gate drivers.

• Integrated protection for short‑circuit (SCP), over‑temperature (OTP), under‑voltage lock‑out (UVLO), and fault signaling.

• Fault output (FO) available to a controller to signal abnormal conditions.

🛡️ 4. Built‑In Protection & Drive Features

The PM200RG1C120 includes several fully integrated safety and driver functions:

✔ Short‑Circuit Protection (SCP) – Fast detection and shutdown to prevent device damage
✔ Over‑Temperature Protection (OTP) – Module shuts down when junction temperature exceeds threshold
✔ Under‑Voltage Lockout (UVLO) – Prevents mis‑firing when driver power is insufficient
✔ Fault Output (FO) – Signals to MCU/CPU when any protection is triggered
✔ Internal Gate Drivers – Integrated drive circuitry simplifies external design

🌡️ 5. Thermal & Mechanical Features

• Low thermal resistance ensures efficient heat transfer to a heatsink.

• Insulated package with high creepage/clearance suitable for industrial environments.

• R‑series (C‑package) module design allows screw terminal mounting directly to a heatsink.

• Built‑in PTC thermistor or temperature sense pins (depending on variant) for real‑time temperature monitoring.

🔧 6. Typical Applications

• Three‑phase motor drives (AC inverters) for industrial fans, pumps, compressors

• Servo and motion control systems requiring fast switching and protection

• Uninterruptible Power Supplies (UPS) and energy storage inverters

• Renewable energy conversion (solar/wind) and charging systems

• Industrial automation systems with integrated dynamic braking or regenerative control

�� General Overview

The 2MBI200U4B‑120 is a high‑current, 1200 V class IGBT (Insulated Gate Bipolar Transistor) power module manufactured by Fuji Electric. It’s designed for medium‑power industrial switching applications and integrates two high‑current IGBTs with free‑wheeling diodes in a single isolated module.

✔ Suitable for robust industrial use such as motor drives, inverters, UPS systems, welding power supplies, and renewable energy converters.

⚙️ Key Electrical Ratings �� Module Configuration & Technology

• Dual IGBT Module — two IGBTs arranged typically in a half‑bridge configuration, with integrated free‑wheeling diodes.
• Chip Technology — uses Fuji’s trench‑type IGBT chips optimized for balanced low conduction loss and decent switching performance.
• Package Style — industrial isolated base module with screw terminals and chassis mounting capability.
• Fast Switching — suitable for PWM inverter controls at industrial frequency ranges.

�� Electrical & Thermal Features Electrical

• High blocking voltage: 1200 V makes it suitable for drives up to standard industrial DC bus levels (~650–900 V).
• Low V_CE(sat) improves conduction efficiency, reducing heat generation.
• Integrated free‑wheeling diodes reduce external component count and simplify inverter leg designs.

Thermal

• Moderate thermal resistance allows effective heat flow to heatsinks with thermal interface material.
• High junction temperature capability supports rugged industrial environments.

�� Typical Applications

This module is commonly used in equipment requiring efficient and reliable power switching:

• AC motor drives and PWM inverters — induction motors, servo motors, etc.
• Uninterruptible Power Supplies (UPS) and power conditioners.
• Solar and wind power inverters.
• Machine tools, welding power supplies, industrial automation.

                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                       

🔌 Module Overview

The NXH350N100H4Q2F2P1G is a Si/SiC hybrid three‑level neutral‑point‑clamped (NPC) power module integrating high‑current IGBTs and fast diodes in a compact industrial package. It is part of ON Semiconductor’s EliteSiC Si/SiC Hybrid Module family, intended for efficient DC‑AC and three‑level converter stages.

• Manufacturer: onsemi (ON Semiconductor)
• Package: Q2PACK‑42 (press‑fit or solder pin options)
• Topology: 3‑Level NPC power stage
• Core Technology: Field‑Stop IGBTs + SiC diodes (hybrid Si/SiC)
• Compliance: Pb‑free, halogen/BFR‑free, RoHS compliant

⚡ Key Electrical Specifications

This combination makes the NXH350N100H4Q2F2P1G suitable for medium‑to‑high power applications with high switching frequency and efficiency requirements.

🧠 Internal Architecture 3‑Level NPC Topology

The module implements a three‑level NPC converter stage. This topology reduces voltage stress on individual devices, lowers switching losses, and improves waveform quality compared to basic 2‑level converters — helpful in high‑efficiency inverters and motor drives.

Hybrid Si/SiC Design

• IGBTs: High‑current silicon Trench Field‑Stop IGBTs handle the main switching.
• SiC Diodes: Integrated silicon carbide diodes provide low reverse recovery and reduced switching losses.
• Thermal Sensing: Many variants include an NTC thermistor for junction temperature monitoring (module protection/control).

🧩 Mechanical & Packaging Features

• Package: Q2PACK‑42, a compact industrial module form factor (~47 × 93 mm).
• Mounting Options:
  • Press‑Fit power pins (for solderless, vibration‑resistant PCB assembly).
  • Solder pin versions also available.
• Low Package Height: Allows better system compactness.
• Thermal Interface: Designed for efficient heat evacuation with heatsinks or baseplate attachments.

 

🚀 Key Features

• High Power Density: Supports ~350 A class switching with integrated protection features.
• Low Switching & Conduction Losses: Field‑Stop IGBT technology improves efficiency in PWM operation.
• SiC Diode Integration: Reduces reverse recovery losses and thermal stress.
• Low Inductive Module Design: Enhances high‑frequency switching performance.
• Industrial Robustness: RoHS compliance and rugged packaging for demanding environments.

🔌 Typical Applications

• Solar photovoltaic (PV) inverters (three‑level converters)
• Uninterruptible Power Supplies (UPS) and power conditioning systems
• Industrial motor drives and variable frequency drives (VFDs)
• Battery energy storage system (BESS) converters

We have gathered a huge customer base in this domain by presenting a comprehensive range of Bridge Rectifiers.