Sanghvi Electronics

General Overview

• SKDH146/16-L100 is a power integrated module (PIM) manufactured by Semikron.

• It combines:

  • Three-phase diode bridge rectifier

  • IGBT braking chopper

  • Freewheeling diode

  • Temperature sensor (NTC)

 Module Topology a) Rectifier Section

• 6 diodes forming a three-phase full bridge rectifier

• Converts AC input → DC output

Braking Chopper Section

• 1 IGBT + freewheeling diode

• Used to:

  • Dissipate excess energy during braking

  • Control DC bus voltage in drives

Key Features

• Integrated rectifier + IGBT chopper

• High voltage capability: 1600 V

• High current capability: ~140–146 A class

• Compact SEMIPONT™ housing

• Built-in NTC temperature sensor

• High surge current capability

• DCB (Direct Copper Bonded) substrate

  • Excellent thermal conductivity

  • High electrical isolation

Reduces:

• External components

• Wiring complexity

• System size

Electrical Characteristics Rectifier Section

• Repetitive peak reverse voltage (V_RRM): 1600 V

• Average forward current (I_F / I_D): ~140 A

• Surge current (I_FSM): ~1250 A (10 ms)

IGBT Chopper Section

• Collector-Emitter Voltage (V_CES): ~1200 V

• Collector Current (I_C): ~75 A (typical chopper rating)

• Integrated freewheeling diode for current circulation

General Characteristics

• Isolation voltage: ~3000–3600 V RMS

• Low forward voltage drop

• Low leakage current

• High reliability under transient conditions

Thermal Characteristics

• Max junction temperature (Tj): up to 150 °C

• Thermal resistance (Rth): low due to DCB substrate

• Designed for:

  • Efficient heat dissipation

  • High power cycling capability

Mechanical Details

• Package: SEMIPONT™ (compact industrial module)

• Dimensions: approx. 100 × 45 × 20 mm

• Mounting: screw mounting on heatsink

• Connections: screw terminals / fast connectors

• Baseplate: electrically isolated

Functional Operation

1. 3-phase AC input applied to rectifier terminals

2. Diode bridge converts AC → DC

3. DC link feeds inverter/load

4. During braking:

   • IGBT chopper activates

   • Energy dissipated through braking resistor

Applications

• Variable Frequency Drives (VFDs)

• Industrial motor drives

• UPS systems

• Battery chargers

• DC motor control systems

• Industrial power supplies

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Important: Despite the name—including “SEMIX” and being listed among IGBT products, this part is not an IGBT switching module in the conventional sense. It is a power diode bridge rectifier module (uncontrolled full‑wave bridge) intended for AC → DC conversion in high‑power systems. This distinction is confirmed from official listings and datasheet excerpts.

Description

The SEMiX291D16S is a high‑power bridge rectifier module in a SEMiX® 13 housing designed for heavy industrial power conversion applications. It integrates multiple high‑current power diodes on an isolated substrate to form a three‑phase full‑wave rectifier.

Module Overview

• Part Number: PM150RLA120 (same family as PM150CL1A120 — similar configuration and ratings)
• Manufacturer: Mitsubishi Electric / Powerex‑style Intelligent Power Module (IPM) design
• Module Type: Three‑phase IGBT power module with integrated drive and protection logic (Intelligent Power Module)
• Voltage Rating: 1200 V (collector‑emitter)
• Current Rating: 150 A continuous per phase
• Isolation Rating: ~2500 VDC isolation between power section and baseplate
• Package: Flat‑base insulated power module (screw/chassis mount)
• Thermal Junction Range: –20 °C to +150 °C

This module is part of Mitsubishi’s Intelligent Power Module (IPM) series — combining multiple IGBT switches, anti‑parallel diodes, and protection circuitry in a single module.

Internal Configuration

The PM150RLA120 contains:

• Three half‑bridge IGBT pairs (six IGBTs total) — forming a three‑phase inverter output stage.
• Anti‑parallel freewheeling diodes across each IGBT for current recirculation during switching.
• Regenerative brake IGBT section (75 A rated) — often used for dynamic braking/regeneration in motor systems.
• Monolithic gate drive and logic circuits built into the module to simplify external gate drive requirements.
• Protection functions including:
  • Short‑circuit protection with integrated detection.
  • Over‑temperature protection via internal sensing.
  • Under‑voltage lockout to prevent improper operation.
  • Fault output pin(s) for interfacing with external controllers.

General Overview

• Manufacturer: Mitsubishi Electric

• Module Type: Intelligent Power Module (IPM)

• Series: G1 Series, C‑package screw‑mount IPM

• Topology: Inverter + brake (7‑pack IPM)

The 2MBI200U4B‑120 is a high‑current, 1200 V class IGBT (Insulated Gate Bipolar Transistor) power module manufactured by Fuji Electric. It’s designed for medium‑power industrial switching applications and integrates two high‑current IGBTs with free‑wheeling diodes in a single isolated module.

Suitable for robust industrial use such as motor drives, inverters, UPS systems, welding power supplies, and renewable energy converters.

Part Overview

• Part number: MDNA360UB2200PTED
• Manufacturer: IXYS (now part of Littelfuse)
• Product type: Three‑phase bridge rectifier with brake unit and NTC temperature sensing in an E2 package

Contrary to some catalog classifications, this module is not a conventional IGBT inverter module (i.e., it does not contain a main switching IGBT bridge for inverter output). Instead, it combines a three‑phase AC rectifier bridge with an integrated brake element and thermistor for high‑power industrial DC‑link applications.

Functional Blocks

The MDNA360UB2200PTED integrates:

• Three–phase bridge rectifier (six power diodes) – converts 3‑phase AC to DC.
• Brake chopper / brake unit – used for dynamic braking energy management in motor control systems.
• NTC temperature sensor – for thermal feedback/monitoring.
• E2‑Pack module – DCB (Direct Copper Bonded) base for mechanical and thermal robustness.

📌 General Overview

The SKIIP20NAB12T45 is a MiniSKiiP® power IGBT module from Semikron Danfoss, designed as a fully integrated intelligent power module (IPM) for industrial AC–DC–AC conversion systems. It combines power semiconductors and auxiliary components into a compact unit to simplify drive designs for motor control, inverters, UPS, and renewable energy systems.

• Series: MiniSKiiP®
• Type: CIB (Converter–Inverter–Brake) IGBT Module
• Voltage class: ~1200 V
• Current class: ~20 A nominal (typical)

⚙️ Electrical Characteristics 🔹 Power Stage Ratings

• Collector–Emitter Voltage (VCES): ~1200 V (module voltage class)
• Nominal Collector Current (IC): ~20 A (approximate, per datasheet class)
• Gate–Emitter Voltage (VGES): ±20 V typical for gate drive
• Topology: 3‑phase Converter + Inverter + Brake integrated system

👉 These ratings position the module for medium‑power industrial drives and inverters.

🧩 Internal Integrated Power Sections

The module integrates several key power blocks:

🅰 Rectifier Section (Converter)

• 3‑phase diode bridge
• Converts AC mains → DC link

🅱 Brake Chopper

• Clamps or dissipates regenerative energy
• Protects DC bus from overvoltage

🅲 Inverter Section

• 3‑phase bridge with IGBTs and freewheeling diodes
• Converts DC link → PWM‑controlled AC output

🅳 Auxiliary Components

• Temperature sensor (NTC) for thermal feedback
• Internal gate driver and protection elements typical of MiniSKiiP modules

⚡ Semiconductor Technology & Features

• IGBT switching devices: High‑efficiency power transistors for PWM conversion
• Freewheeling diodes: Anti‑parallel to IGBTs to carry reverse currents during switching
• Integrated brake chopper: Supports dynamic braking and regeneration control
• Compact, solder‑free pressure contacts: Improves reliability compared with soldered modules (standard MiniSKiiP build)

🌡️ Thermal Management & Protection

• Temperature sensing (NTC): Allows control system monitoring and overtemperature protection
• Efficient heat dissipation design: Minimizes thermal resistance and supports stable operation under load
• Typical MiniSKiiP packaging improves thermal coupling to a heatsink (direct attach)

🏗️ Mechanical & Packaging

• Package: MiniSKiiP® (compact integrated module)
• Mounting: Screw‑mount to heatsink
• Electrical connections: Spring contact and press‑fit for power and auxiliary pins
• Size: ~62 mm × 132 mm × 26 mm (module body)

🔋 Typical Applications

The SKIIP20NAB12T45 is suited for:

• Industrial three‑phase motor drives
• Variable Frequency Drives (VFDs)
• AC power inverters
• Renewable energy power stages
• Uninterruptible Power Supplies (UPS)
• General medium‑power power conversion systems                                                

Overview – SKIIP31NAB065T12 IGBT Power Module

• Part Number: SKIIP31NAB065T12
• Manufacturer: SEMIKRON
• Device Type: IGBT Power Module (Insulated Gate Bipolar Transistor module)
• Series: SKiiP 31 (MiniSKiiP family; medium‑power semiconductor power module)
• RoHS Compliance: Lead‑free and RoHS compliant (environmentally compliant)
• General Use: Medium‑power AC/DC and DC/AC power conversion and control systems.

Key Functional Description 

The SKIIP31NAB065T12 is a power switching module that contains one or more IGBT semiconductor switches and often integrated free‑wheeling diodes or rectifier components packaged together in a compact module. It uses advanced semiconductor fabrication to offer efficient high‑voltage switching with high current capability, making it suitable for demanding industrial applications.

Core Function

• Solid‑state power switching: Acts as a controllable high‑power switch in power electronic converters.
• IGBT Technology: Combines MOSFET‑like gate control with bipolar transistor current capability — enabling high voltage and current handling with relatively fast switching and low conduction loss.
• Thermal Management: Designed for efficient heat dissipation through a heat‑sink mounting surface, critical for high‑power operation.

The NXH350N100H4Q2F2P1G is a Si/SiC hybrid three‑level neutral‑point‑clamped (NPC) power module integrating high‑current IGBTs and fast diodes in a compact industrial package. It is part of ON Semiconductor’s EliteSiC Si/SiC Hybrid Module family, intended for efficient DC‑AC and three‑level converter stages.

• Manufacturer: onsemi (ON Semiconductor)
• Package: Q2PACK‑42 (press‑fit or solder pin options)
• Topology: 3‑Level NPC power stage
• Core Technology: Field‑Stop IGBTs + SiC diodes (hybrid Si/SiC)
• Compliance: Pb‑free, halogen/BFR‑free, RoHS compliant

 Technical Description 

• Single Thyristor (SCR) module
• Configuration: Phase-control device (not self-turn-off like IGBT)
• Technology: Pressure contact power module

Unlike IGBTs, this device:

• Turns ON via gate pulse
• Turns OFF only when current drops below holding current

Electrical Ratings

• Repetitive peak voltage (VDRM / VRRM): 2600 V
• Average on-state current (ITAV): 400 A
• Surge current (ITSM): 11,000 A (10 ms)
• I²t rating: 605 kA²·s

Designed for high-power, high-current industrial systems

On-State Characteristics

• Threshold voltage (VT0): ~1 V
• On-state resistance (rT): ~0.5 mΩ

Very low conduction losses at high current

Dynamic Characteristics

• Critical di/dt: 150 A/µs
• dv/dt capability: ~1000 V/µs class (from coding “F”)

Requires proper snubber circuits in fast-switching environments

Thermal Characteristics

• Max junction temperature (Tj): 125 °C
• Thermal resistance (RthJC): 0.065 K/W

Efficient heat transfer → suitable for heavy-duty operation

Mechanical / Package

• Module type: 50 mm industrial power block
• Mounting: Pressure contact with isolated copper baseplate
• Weight: ~900 g

Key Features

• Pressure-contact technology → high reliability
• Electrically insulated baseplate → easy mounting
• “Short-on-fail” behavior → safe failure mode
• High robustness under thermal and electrical cycling

Typical Applications

• AC/DC converters & rectifiers
• Motor soft starters and drives
• Power regulators (phase control)
• Welding equipment
• Industrial heating systems  
• Heavy power control systems                                                                                                                                                                                                                    

        

General Overview

• Type: SKIIP83AHB15T1 is a full-bridge IGBT module.

• Manufacturer: Semikron

• Technology: IGBT + Diode (in a module package)

• Application: Power conversion, motor drives, inverters, welding, UPS, traction, and industrial converters.

The module contains IGBTs and freewheeling diodes arranged in a bridge configuration, which allows AC-DC or DC-AC conversion in a compact, high-power package.

Electrical Characteristics

• Collector-Emitter Voltage (V_CE): 1200 V (common for SKIIP83 series)

• Collector Current (I_C): 83 A nominal (continuous), 130 A pulsed (short-duration)

• Diode Reverse Voltage: Matches the IGBT rating (~1200 V)

• Gate Threshold Voltage (V_GE(th)): Typically 5 V

• Switching Frequency: Suitable for medium to high frequency PWM applications

Key features:

• Low conduction and switching losses

• High short-circuit ruggedness

• Integrated fast-recovery diodes for freewheeling

Thermal Characteristics

• Module Case Temperature (T_C): –40°C to +125°C (operating range)

• Junction Temperature (T_J): Up to 150°C

• Thermal Resistance (R_thJC): Typically ~0.25 K/W for each IGBT

Thermal management is crucial: the module usually requires a heatsink and sometimes forced air or liquid cooling for high-power operation.

Mechanical Features

• Package: Press-fit or bolted module with ceramic baseplate

• Size: Roughly ~80 × 140 × 25 mm (check datasheet for exact)

• Terminal Type: Screw or pressure contacts for DC and AC terminals

Designed for robust industrial environments, including vibration and thermal cycling.

Bridge Configuration

• Full Bridge: 4 IGBTs + 4 Diodes internally connected

• Function: Can implement H-bridge for motor drives or single-phase inverter

• Gate Control: Each IGBT gate must be driven by an isolated gate driver circuit

• Protection: Module supports short-circuit detection, often via external circuits

Advantages

• High current and voltage handling

• Compact for high-power applications

• Integrated diodes reduce component count

• Rugged industrial reliability